Abstract:Polycrystalline ZnS films were prepared by pulsed laser deposition (PLD) on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 C, which is a suitable alternative to chemical bath deposited (CBD) CdS as a buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase -ZnS (111) direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show A1 mode at approximately 350 cm1, generally observed in the cubic phase -ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS (2.4 eV), which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.

Effects of SiC Buffer on the Structural and Photoelectrical Properties of ZnO Thin Films Grown on Si(111) by PLD

Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)

Effects of homo-buffer layer on properties of ZnO films grown on Si(111) by pulsed laser deposition

Effects of Homo-buffer Layer on Properties of ZnO Films Grown on Si(1 1 1) by Pulsed Laser Deposition

The Structure and Optical Properties of SiC Film on Si (111) Substrate with a ZnO Buffer Layer by RF-magnetron Sputtering Technique

Initial Study on the Structure and Optical Properties of ZnO Film on Si(111) Substrate with a SiC Buffer Layer

Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer

Effects of Growth Atmosphere and Homo-Buffer Layer on Properties of ZnO Films Prepared on Si(1 1 1) by PLD

Epitaxial growth of ZnO thin films on Si substrates by PLD technique

Hetero-Epitaxy ZnO/SiC/Si by LP-MOCVD

Structure and Properties of ZnO Films Grown on Si Substrates with Low Temperature Buffer Layers

Effects of the Low-temperature Buffer Layer on the Properties of ZnO Thin Films

Structure and Optical Properties of the SiC/ZnO Five-Layer Multi-Layer on Si (111) Substrate with a SiC Buffer Layer

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Effects of ZnO Buffer Layer Thickness on Properties of ZnO Thin Films Deposited by Low-Pressure MOCVD

The Structure and Photoluminescence Properties of ZnO/SiC Multilayer Film on Si Substrate

Effect of the ZnO buffer layer thickness on AZO film properties

Pulsed Laser Deposition Zns Buffer Layers for Cigs Solar Cells

An Au Buffer Layer for the Growth of a ZnO Sol–gel Film on a Si Substrate

Structural Characteristics of ZnO Epilayer Grown on Si Substrates

Effects of the AlN Buffer Layer Thickness on the Properties of ZnO Films Grown on C-Sapphire Substrate by Pulsed Laser Deposition