Abstract:AbstractA thermomechanical model to describe the mechanisms of polishing pad scratching in chemical–mechanical planarization (CMP) has been formulated and investigated. CMP is a necessary process in integrated circuit (IC) fabrication to planarize wafers with nanoscale features after patterned layer deposition. Polishing pad asperities can produce microscale scratches on the wafer surface during CMP, reducing IC manufacturing yields. The constructed thermomechanical model accounts for stresses of the pad and wafer contact and also provides the means to track input energy dissipation during CMP. Tracking energy dissipation offers information about processes that may influence scratch production. This knowledge ultimately produces a greater physical understanding of CMP for the prevention of pad scratching. Polishing pad stress relaxation experiments demonstrate the importance of viscoelastic and plastic strain energy dissipation with its effects on the wafer stress field. Scratch producing ability of the polishing pad is found to decrease with use in CMP, with slurry soaking and increasing polishing time. Mechanical behavior of the polishing pad is demonstrated to differ when in compression and in tension. Compressibility of the pad material is shown to be significant in stress modeling through experimental measurement of polishing pad volume change. Differential scanning calorimetry of used polishing pad samples revealed energy dissipation into the polishing pad surface with increasing polishing time of CMP. Energy dissipation processes influence pad scratching in CMP. Analytical wafer stress field modeling unveils that the scratching ability of a polishing pad decreases when it is less stiff or has a smoother surface.

A Statistical Characterization Model of the Microscale Contact State of Polishing Pads

Modeling the microscale contact status in chemical mechanical polishing process

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

A Contact-Mechanics-Based Model For General Rough Pads In Chemical Mechanical Polishing Processes

Contribution of Porous Pad to Chemical Mechanical Polishing

Prediction of Pad Wear Profile and Simulation of Its Influence on Wafer Polishing

A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process

A model for chemical–mechanical polishing of a material surface based on contact mechanics

Mechanical Model of Single Abrasive During Chemical Mechanical Polishing: Molecular Dynamics Simulation

A Preliminary Model Accounting for the Suction Pressure in CMP Process

Impact of Pad–Wafer Contact Area in Chemical Mechanical Polishing

Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface

Analysis on Pad Effects in Chemical Mechanical Polishing

Analysis on Contact and Flow Features in CMP Process

Energy dissipation and constitutive modeling for a mechanistic description of pad scratching in chemical–mechanical planarization

Estimating Chemical Mechanical Polishing Pad Wear with Compressibility

Micro-scale contact behavior and its effect on the material removal process during chemical mechanical polishing

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Characterization of Pad–Wafer Contact and Surface Topography in Chemical Mechanical Planarization Using Laser Confocal Microscopy

Mechanical Model of Nanoparticles for Material Removal in Chemical Mechanical Polishing Process