Abstract:Establishing ohmic contacts on 2D material‐based electronic devices is challenging but critical. While most efforts focus on improving metal‐semiconductor band‐structure alignment, the effects of charge carrier momentum (p) distribution at the interfaces are often overlooked. This work experimentally illustrates the significance of this factor and, more importantly, provides an alternative and versatile solution for constructing high‐performance ohmic contacts in 2D microelectronics. The difficulty of achieving ohmic contacts is a long‐standing challenge for the development and integration of devices based on 2D materials, due to the large mismatch between their electronic properties and those of both traditional metal‐based and van der Waals (vdWs) electrodes. Research has focused primarily on the electronic energy band alignment, while the effects of momentum mismatch on carrier transport across the vdWs gaps are largely neglected. Graphene‐silicon junctions are utilized to demonstrate that electron momentum distribution can dominate the electronic properties of vdWs contacts. By judiciously introducing scattering centers at the interface that provide additional momentum to compensate the momentum mismatch, the junction conductivity is enhanced by more than three orders of magnitude, enabling the formation of high‐quality ohmic contacts. The study establishes the framework for the design of high‐performance ohmic vdWs contacts based on both energy and momentum matching, which can facilitate efficient heterogeneous integration of 2D–3D systems and the development of post‐CMOS architectures.

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