Abstract:As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.

Sm and Gd Contacts in 2D Semiconductors for High-Performance Electronics and Spintronics

Contact Engineering for Two-Dimensional Semiconductors

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors

Gate Dielectrics Integration for Two‐Dimensional Electronics: Challenges, Advances and Outlook

Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials

Improving 2D Schottky Contacts Using an Intralayer Strategy

Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices

Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters

Spintronics in Two-Dimensional Materials

One-dimensional semimetal contacts to two-dimensional semiconductors

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

2D materials for spintronic devices

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Contacts Between Two- and Three-Dimensional Materials: Ohmic, Schottky, and P-N Heterojunctions.

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

2D Semiconductors for Specific Electronic Applications: from Device to System

Mechanisms of Controllable Growth and Ohmic Contact of Two-Dimensional Molybdenum Disulfide: Insight from Atomistic Simulations

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Silicon-processes-compatible contact engineering for two-dimensional materials integrated circuits

All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors