Abstract:Establishing ohmic contacts on 2D material‐based electronic devices is challenging but critical. While most efforts focus on improving metal‐semiconductor band‐structure alignment, the effects of charge carrier momentum (p) distribution at the interfaces are often overlooked. This work experimentally illustrates the significance of this factor and, more importantly, provides an alternative and versatile solution for constructing high‐performance ohmic contacts in 2D microelectronics. The difficulty of achieving ohmic contacts is a long‐standing challenge for the development and integration of devices based on 2D materials, due to the large mismatch between their electronic properties and those of both traditional metal‐based and van der Waals (vdWs) electrodes. Research has focused primarily on the electronic energy band alignment, while the effects of momentum mismatch on carrier transport across the vdWs gaps are largely neglected. Graphene‐silicon junctions are utilized to demonstrate that electron momentum distribution can dominate the electronic properties of vdWs contacts. By judiciously introducing scattering centers at the interface that provide additional momentum to compensate the momentum mismatch, the junction conductivity is enhanced by more than three orders of magnitude, enabling the formation of high‐quality ohmic contacts. The study establishes the framework for the design of high‐performance ohmic vdWs contacts based on both energy and momentum matching, which can facilitate efficient heterogeneous integration of 2D–3D systems and the development of post‐CMOS architectures.

Momentum Matching for 2D-3D Heterogeneous Ohmic van der Waals Contact

Interfacial Momentum Matching for Ohmic Van Der Waals Contact Construction

Tunable Two-Dimensional Interfacial Coupling in Molecular Heterostructures

Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects

Suppressing the vdW Gap‐Induced Tunneling Barrier by Constructing Interfacial Covalent Bonds in 2D Metal–Semiconductor Contacts

Momentum matching and band-alignment type in van der Waals heterostructures: Interfacial effects and materials screening

Contacts Between Two- and Three-Dimensional Materials: Ohmic, Schottky, and P-N Heterojunctions.

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Contact Engineering for Two-Dimensional Semiconductors

Contact engineering for two-dimensional metal/qHP C60 van der Waals heterostructure

Formation of Ohmic contacts between ferromagnetic Cr 2 Ge 2 Te 6 and two-dimensional metals.

Interfacial Charge Transfer Circumventing Momentum Mismatch at 2D van der Waals Heterojunctions

Transition from Schottky to ohmic contacts in the C 31 and MoS 2 van der Waals heterostructure

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions

Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact

Formation of Ohmic contacts between ferromagnetic Cr2Ge2Te6and two-dimensional metals

Design of ohmic contacts between Janus MoSSe and two-dimensional metals

Interfacial Charge Transfer Circumventing Momentum Mismatch at Two-Dimensional Van Der Waals Heterojunctions

Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures