Interfacial Charge Transfer Circumventing Momentum Mismatch at 2D van der Waals Heterojunctions

Haiming Zhu,Jue Wang,Zizhou Gong,Young Duck Kim,Martin Gustafsson,James Hone,Xiaoyang Zhu
DOI: https://doi.org/10.1021/acs.nanolett.7b00748
2017-02-21
Abstract:Interfacial charge separation and recombination at heterojunctions of monolayer transition metal dichalcogenides (TMDCs) are of interest to two dimensional optoelectronic technologies. These processes can involve large changes in parallel momentum vector due to the confinement of electrons and holes to the K-valleys in each layer. Since these high-momentum valleys are usually not aligned across the interface of two TMDC monolayers, how parallel momentum is conserved in the charge separation or recombination process becomes a key question. Here we probe this question using the model system of a type-II heterojunction formed by MoS2 and WSe2 monolayers and the experimental technical of femtosecond pump-probe spectroscopy. Upon photo-excitation specifically of WSe2 at the heterojunction, we observe ultrafast (<40 fs) electron transfer from WSe2 to MoS2, independent of the angular alignment and, thus, momentum mismatch between the two TMDCs. The resulting interlayer charge transfer exciton decays via nonradiatively recombination, with rates varying by up to three-orders of magnitude from sample to sample, but with no correlation with inter-layer angular alignment. We suggest that the initial interfacial charge separation and the subsequent interfacial charge recombination processes circumvent momentum mismatch via excess electronic energy and via defect-mediated recombination, respectively.
Materials Science,Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in two - dimensional van der Waals heterojunctions (heterojunctions composed of monolayer materials of transition metal dichalcogenides), how to overcome the problem of momentum mismatch during the interface charge separation and recombination processes. Specifically, the paper focuses on: 1. **Momentum Mismatch Problem**: - In two - dimensional transition metal dichalcogenides (TMDCs) heterojunctions, electrons and holes are confined in the K valleys of each layer. Since these high - momentum valleys are usually not aligned at the interface between two TMDC monolayers, how to maintain parallel momentum during charge separation or recombination becomes a crucial issue. - By studying the type - II heterojunction formed by MoS₂ and WSe₂ monolayers, the paper explores the influence of momentum mismatch on interface charge transfer. 2. **Experimental Methods and Observations**: - Using femtosecond pump - probe spectroscopy, the researchers specifically excite the A excitons in WSe₂ and observe that electrons are transferred from WSe₂ to MoS₂ ultrafast (<40 fs), and this process is independent of the angular arrangement between the two layers, that is, momentum mismatch does not affect the electron transfer speed. - The formed inter - layer charge - transfer excitons decay through non - radiative recombination, and their rates vary significantly among different samples (from ~40 ps to ~3 ns), but there is no obvious correlation with the inter - layer angular arrangement. 3. **Mechanism Explanation**: - The researchers propose that the initial interface charge separation circumvents momentum mismatch through excessive electron energy, and the subsequent interface charge recombination is achieved through defect - mediated non - radiative recombination. - By introducing excessive energy, electrons can transfer in a wider momentum space range, thus bypassing the problem of momentum mismatch. And the recombination process depends on defect - assisted non - radiative recombination, and these defects can localize carriers and satisfy momentum conservation. In summary, this paper aims to reveal how the interface charge separation and recombination processes in two - dimensional TMDC heterojunctions overcome the problem of momentum mismatch through excessive electron energy and defect - mediated ways. This provides important insights for understanding the charge transport mechanisms in two - dimensional materials and theoretical support for future optoelectronic applications.