Abstract:In this paper, uniformly doped drift region of silicon carbide (SiC) super-junction (SJ) MOSFET is replaced with vertical variable doping profile (VVD) to achieve a better tradeoff between breakdown voltage (BV) and specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">${R}_{\text {sp,on}}$ </tex-math></inline-formula>). While it is known that the SJ device consists of two vertical columns of n- and p-type, SJ VVD feature lies in increasing the doping concentration from top to bottom in the N-column and vice-versa in the P-column within the drift region. The proposed SJ VVD allows <inline-formula> <tex-math notation="LaTeX">$\text {R}_{{\text {sp, on}}}$ </tex-math></inline-formula> to reduce further due to increased average doping concentration in conducting N-column and BV to increase further due to shifting of an electric field from corners to the center of the drift region. BV and <inline-formula> <tex-math notation="LaTeX">${R}_{\text {sp,on}}$ </tex-math></inline-formula> improved by 10% in an SJ VVD MOSFET and these parameters follow linear relationship similar to SJ MOSFET. The 2-D numerical simulations from Synopsys TCAD are used for investigating the static and dynamic characteristics of the device. In addition to 30% improvement in Baliga figure of merit, 35% improvement is obtained over SJ MOSFET in turn on and turn off switching energies for a clamped inductive circuit at 1200 V–20 A. Improved dynamic characteristics of SJ VVD can be attributed to reduction in gate charge (<inline-formula> <tex-math notation="LaTeX">${Q}_{g}$ </tex-math></inline-formula>) and miller capacitance (<inline-formula> <tex-math notation="LaTeX">${c}_{\text {rss}}$ </tex-math></inline-formula>) compared to SJ MOSFET.

Improved Breakdown-Voltage Complementary MOSFET in a 0.18&#x00b5;m Standard CMOS Process for Switch Mode Power Supply (SMPS) Applications

Experimental and Theoretical Study of an Improved Breakdown Voltage SOI LDMOS with a Reduced Cell Pitch

Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance

New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics.

Ultralow Power Loss Integratable High-voltage MOSFETs

A Lateral Power P-Channel Trench MOSFET Improved by Variation Vertical Doping

Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench Hk-Pillar Superjunction for Enhanced Performance

Optimization of Specific On-Resistance of Balanced Symmetric Superjunction MOSFETs Based on a Better Approximation of Ionization Integral

Design and Optimization of SiC Super-Junction MOSFET Using Vertical Variation Doping Profile

New High-Voltage ( 1200 V) MOSFET With the Charge Trenches on Partial SOI

Investigation of Breakdown Voltage Degradation in Low-Voltage Narrow Gate Trench MOSFET by Edge Termination Optimization

The Superjunction Device with Optimized Process Window of Breakdown Voltage

Analysis of Simulation Approaches for the Breakdown Characteristics of SOI High-Voltage PMOS in a Fixed Power Supply

Cost-Effective Integrated RF Power Transistor in 0.18- $muhboxm$ CMOS Technology

An improved SiC SWITCH‐MOS with superior forward performance

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

Super Junction LDMOS with Enhanced Dielectric Layer Electric Field for High Breakdown Voltage

High Figure-of-merit Vertical Double Diffused MOSFET with the Charge Trenches on Partial SOI

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Novel Grid-Gate 16V-Nldmos with a Low Specific On-Resistance of 4.7mω.mm2based on A Standard 0.18μm BCD Platform

A novel split gate trench MOSFET with high-k pillar embedded for higher breakdown voltage

Improved Breakdown-Voltage Complementary MOSFET in a 0.18&amp;#x00b5;m Standard CMOS Process for Switch Mode Power Supply (SMPS) Applications