An improved SiC SWITCH‐MOS with superior forward performance

Junji Cheng,Tao Zhong,Huan Li,Ping Li,Bo Yi,Haimeng Huang,Siliang Wang,Qiang Hu,Hongqiang Yang
DOI: https://doi.org/10.1049/pel2.12808
IF: 2
2024-11-02
IET Power Electronics
Abstract:This work proposes an improved 4H‐SiC SBD‐wall‐integrated trench metal‐oxide‐semiconductor (SWITCH‐MOS) with n‐bury and split‐gate. The static performance of the proposal can be optimized by n‐bury and the dynamic performance can be improved by split‐gate. Therefore, the proposed device preserves advanced reverse performance and simultaneously, a superior forward performance that SWITCH‐MOS always craves is achieved. An improved 4H‐SiC SBD‐wall‐integrated trench metal‐oxide‐semiconductor (SWITCH‐MOS) with n‐bury and split‐gate is proposed. Under the premise of ensuring breakdown voltage (BV), the n‐bury layer can smooth the path to current conduction, which reduces the specific on‐resistance (RON, SP) and improves static characteristics. Besides, the split‐gate is able to transform the gate‐drain capacitance (CGD) and improve the dynamic characteristics. Therefore, a superior forward performance that SWITCH‐MOS always craves is achieved. According to the simulation results, compared to the conventional SWITCH‐MOS with almost the same BV, the proposed one reduces the RON, SP by 57% and the CGD by 59% while gaining equally advanced reverse performance. Its reverse conduction voltage is only −1.78 V, but its figure of merit reaches 1.67 GW/cm2 and 65 mΩ·nC, which is attractive for the application in power inverters.
engineering, electrical & electronic
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