Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Influences of Antimony Concentration on Nanometer-sized Tin Dioxide Powders

Synthesis and structural/microstructural characteristics of antimony doped tin oxide $(Sn_{1-x}Sb_{x}O_{2-δ})$

Structural/microstructural, optical and electrical investigations of Sb-SnO2 thin films deposited by spray pyrolysis

Influences of Tin Oxide Surface Modification on the Morphology and Performance of Sintered Ag/SnO2 Composite Powders

Synthesis of Tin Oxide Nanoparticles by Precipitation Process: Effects of pH and Temperature on the Particle Size and Morphology

Synthesis and Characterization of Sn1-xBixO2 Nano-powder

Preparation of Sb:SnO2 thin films and its effect on opto-electrical properties

OPTICAL AND ELECTRICAL PROPERTIES OF SnO2:Sb THIN FILMS DEPOSITED BY SOL-GEL PROCESS

Effects of Doping Ratio and Calcinations on Structure and Electrical Conductivity of Antimony Doped Tin Oxide

Preparation of Antimony Doped Tin Oxide (ATO) Nanopowders by Hydrothermal Method

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

A Study on the Influencing Factors in the Preparation of Bismuth-doped Tin Oxide Nano-powders by Co-Precipitation

EFFECTS OF DOPING RATE AND TREATMENT TEMPERATURE ON ELECTRICAL PROPERTIES AND STRUCTURE OF ANTIMONY DOPED TIN OXIDE

Synthesis of Sn Nanoparticles and Their Size Effect on the Melting Point

Effect of SnO2 concentration on the dielectric properties of BaTiO3-(Sr1-1.5xBix)TiO3 ceramics

Influence of samarium modification on the phase-change performance and phase structure of tin antimonide

Lanthanum Concentration Dependence of Electrical Properties in Tin Oxide Thin Films

The effect of tin doping on the band structure and optical properties of polycrystalline antimony selenide

Dopant segregation analysis on Sb:SnO2 nanocrystals

Ab Initio Electronic Structure Investigation of Antimony-Doped SnO2 (110) Nanosheet

First principles study of the electronic structure of antimony (Sb) and samarium (Sm) doped tin dioxide (SnO2) based on big data analysis