Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Ab Initio Electronic Structure Investigation of Antimony-Doped SnO2 (110) Nanosheet

The Effect of Ⅲ-family Element Doping on Electronic Structures and Electrical Characteristics of SnO2

Sb-doping effects on optical and electrical parameters of SnO2 films

Electronic structure and optical properties of Sb-doped SnO2

First principles study of the electronic structure of antimony (Sb) and samarium (Sm) doped tin dioxide (SnO2) based on big data analysis

Doping-dependent optoelectronic, and magnetic properties of monolayer SnS

A first-principles study of the electronic and structural properties of Sb and F doped SnO2 nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Effect of Sb doping on the transport and electrochemical properties of partially amorphous SnO2 thin films

Effects of surface structure and Ag-Sb nanodots on electronic properties of PbTe (1 0 0) facets from first-principles calculations

Effect of Sb doping on structural, electrical and optical properties of epitaxial SnO2 films grown on r-cut sapphire

Structural/microstructural, optical and electrical investigations of Sb-SnO2 thin films deposited by spray pyrolysis

First-principles study of the electronic structure and optical properties of C-doped SnS2

Effects Of Surface Structure And Ag-Sb Nanodots On Electronic Properties Of Pbte (100) Facets From First-Principles Calculations

Preparation of Sb:SnO2 thin films and its effect on opto-electrical properties

The effect of tin doping on the band structure and optical properties of polycrystalline antimony selenide

Optoelectronic Property Exploration in SnS2 Monolayer and Homojunctions with Non-metallic Element (B, C, N) Doping: A First-Principles Investigation

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

Synthesis and structural/microstructural characteristics of antimony doped tin oxide $(Sn_{1-x}Sb_{x}O_{2-δ})$

Doping-Dependent Electrical Characteristics of SnO 2 Nanowires QW acknowledges support from the National Science Foundation (NSF) of China (grant number 50602014), the Program …