Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

The effect of tin doping on the band structure and optical properties of polycrystalline antimony selenide

Enhanced Electrical Conductivity and Photoconductive Properties of Sn-doped Sb2Se3 Crystals

Doping Effects Of Sb And Pb In Epitaxial Topological Insulator Bi2se3 Thin Films: An In Situ Angle-Resolved Photoemission Spectroscopy Study

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Sb-doping effects on optical and electrical parameters of SnO2 films

Effect of Sb doping on structural, electrical and optical properties of epitaxial SnO2 films grown on r-cut sapphire

Enhanced Photoresponse of Indium-Doped Tin Disulfide Nanosheets.

Structural/microstructural, optical and electrical investigations of Sb-SnO2 thin films deposited by spray pyrolysis

Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide

Effect of selenisation on the properties of antimony selenide thin films

Realizing High Thermoelectric Performance of Ag/Al Co‐Doped Polycrystalline SnSe through Band Structure Modification and Hydrogen Reduction

Impact of Sn-doping on the optoelectronic properties of zinc oxide crystal: DFT approach

Synthesis and structural/microstructural characteristics of antimony doped tin oxide $(Sn_{1-x}Sb_{x}O_{2-δ})$

Preparation of Sb:SnO2 thin films and its effect on opto-electrical properties

Effects of Sb doping on the structure and properties of SnO2 films

Effects of different LaCl3 doping processes on the thermoelectric properties of SnSe bulk materials

Influence of samarium modification on the phase-change performance and phase structure of tin antimonide

Effects of Sb-doping on the Electron-Phonon Transport Properties of Bi2O2Se

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Study on the Thermoelectric Properties of N-Type Polycrystalline SnSe by CeCl3 Doping

Influence of Doping on the Topological Surface States of Crystalline Bi2Se3 Topological Insulators