Abstract:Top-gated (TG) molybdenum disulfide (MoS 2 ) field-effect transistors (FETs) suffer from surface damage, unintentional doping, and other defects introduced to the MoS 2 channel during the direct deposition of the gate dielectric. In addition, the delicate MoS 2 cannot withstand high-temperature processing or annealing. To overcome these obstacles, a novel path to prepare TG MoS 2 negative-capacitance (NC) FETs is proposed in this study. A ferroelectric HfZrO 2 (HZO) is first deposited on the mica flake by pulsed laser deposition (PLD) and then annealed by rapid thermal processing. Subsequently, the HZO/mica stack is integrally transferred onto the MoS 2 surface, without needing to expose the MoS 2 flake to harsh temperatures or PLD environments. TG multilayered MoS 2 NCFETs with the HZO/mica stack are fabricated and demonstrate stable NC effects and superior performance with a subthreshold swing (SS) of 49 mV/dec, ON/OFF current ratio above 10 7 , and anticlockwise hysteresis voltages of 64 mV, which are attributed to vital contributions from the damage-free mica/MoS 2 van der Waals heterojunction interface and reasonable capacitance matching between the mica dielectric and the ferroelectric HZO film. Moreover, the experimental results of the dual-gate MoS 2 transistor modulated by the bottom gate show that a positive bottom-gate bias can increase drain current and decrease hysteresis voltage, and a negative bottom-gate bias can reduce SS. Therefore, the proposed approach changes the current situation that the PLD method is hardly used to fabricate TG MoS 2 transistors and opens a new window for nanoelectronics.

Top-Gated MoS₂ Negative-Capacitance Transistors Fabricated by an Integral-Transfer of Pulsed Laser Deposited HfZrO₂ on Mica

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Impacts of HfZrO thickness and anneal temperature on performance of MoS2negative-capacitance field-effect transistors

Ferroelectric Hfzrox-Based Mos2 Negative Capacitance Transistor With Ito Capping Layers For Steep-Slope Device Application

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Steep-slope hysteresis-free negative capacitance MoS2 transistors

Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

Optimization of Subthreshold Swing and Hysteresis in Hf 0.5 Zr 0.5 O 2 -Based MoS 2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Domain Wall Enabled Steep Slope Switching in MoS$_2$ Transistors Towards Hysteresis-Free Operation

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering