Disclosing the Annihilation Effect of Ion-Implantation Induced Defects in Single-Crystal Diamond by Resonant MEMS

Guo Chen,Zilong Zhang,Yasuo Koide,Satoshi Koizumi,Zhaohui Huang,Meiyong Liao
DOI: https://doi.org/10.1016/j.diamond.2023.110240
IF: 3.806
2023-01-01
Diamond and Related Materials
Abstract:Single-crystal diamond presents as an ideal semiconductor material for high-performance and high-reliability MEMS devices, on account of its outstanding mechanical and physical properties. A smart-cut technology based on ion-implantation was proposed to fabricate the SCD-on-SCD MEMS resonators. However, the ionimplantation damage induced defects would degrade the quality (Q) factors of the diamond MEMS resonators. Here, we systematically investigate the effect of ultra-high vacuum annealing on the resonance properties of SCD cantilevers. It is observed that the Q factors are markedly improved by nearly twice after annealing at 1100 degrees C due to the annihilation of the ion implantation induced damage in the resonators. Therefore, reducing the defects in the resonators by high-temperature annealing the as-fabricated SCD MEMS cantilevers is one of the strategies to improve the Q factors. This work also proves out that MEMS represents a more sensitive tool for characterizing the crystalline quality of diamond, compared with the conventional structural methods.
What problem does this paper attempt to address?