Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors
Xinyu Wang,Xinyu Chen,Jingyi Ma,Saifei Gou,Xiaojiao Guo,Ling Tong,Junqiang Zhu,Yin Xia,Die Wang,Chuming Sheng,Honglei Chen,Zhengzong Sun,Shunli Ma,Antoine Riaud,Zihan Xu,Chunxiao Cong,Zhijun Qiu,Peng Zhou,Yufeng Xie,Lifeng Bian,Wenzhong Bao
DOI: https://doi.org/10.1002/adma.202202472
IF: 29.4
2022-06-22
Advanced Materials
Abstract:Two‐dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy‐efficient electronics. However, the development of large‐scale ICs based on 2D materials is still in its early stage, mainly due to the non‐uniformity of the individual devices and little investigation of device and circuit level optimization. Herein, we successfully synthesized a 4‐inch high‐quality monolayer MoS2 film, which was then used to fabricate top gated (TG) MoS2 field‐effect transistors (FETs) with wafer‐scale uniformity. Some basic circuits such as SRAM and ring oscillators were first examined. A pass‐transistor logic configuration based on pseudo‐NMOS was then employed to design more complex MoS2 logic circuits, which were successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer‐scale 2D semiconductors for application in complex ICs. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology