Abstract:Inspired by the human brain, the spike-based neuromorphic system has attracted strong research enthusiasm because of the high energy efficiency and powerful computational capability, in which the spiking neurons and plastic synapses are two fundamental building blocks. Recently, two-terminal threshold switching (TS) devices have been regarded as promising candidates for building spiking neurons in hardware. However, how circuit parameters affect the spiking behavior of TS-based neurons is still an open question. Here, based on a leaky integrate-and-fire (LIF) neuron circuit, we systematically study the effect of both the extrinsic and intrinsic factors of NbO x -based TS neurons on their spiking behaviors. The extrinsic influence factors contain input intensities, connected synaptic weights, and parallel capacitances. To illustrate the effect of intrinsic factors, including the threshold voltage, holding voltage, and high/low resistance states of NbO x devices, we propose an empirical model of the fabricated NbO x devices, fitting well with the experimental results. The results indicate that with enhancing the input intensity, the spiking frequency increases first then decreases after reaching a peak value. Except for the connected synaptic weights, all other parameters can modulate the spiking peak frequency under high enough input intensity. Also, the relationship between energy consumption per spike and frequency of the neuron cell is further studied, leading guidance to design neuron circuits in a system to obtain the lowest energy consumption. At last, to demonstrate the practical applications of TS-based neurons, we construct a spiking neural network (SNN) to control the cart-pole using reinforcement learning, obtaining a reward score up to 450. This work provides valuable guidance on building compact LIF neurons based on TS devices and further bolsters the construction of high-efficiency neuromorphic systems.

A Compact Artificial Spiking Neuron Using a Sharp-Switching FET with Ultra-Low Energy Consumption Down to 0.45 Fj/spike

1T Spiking Neuron Using Ferroelectric Junctionless FET with Ultra-Low Energy Consumption of 24 aJ/Spike

Ultra-Low-Power Compact Neuron Circuit with Tunable Spiking Frequency and High Robustness in 22 Nm FDSOI

Engineering Spiking Neurons Using Threshold Switching Devices for High-Efficient Neuromorphic Computing

Compact artificial neuron based on anti-ferroelectric transistor

Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor Synapse

Quantum Tunneling Based Ultra-Compact and Energy Efficient Spiking Neuron Enables Hardware SNN

One Transistor One Electrolyte‐Gated Transistor Based Spiking Neural Network for Power‐Efficient Neuromorphic Computing System

A Biomimetic Tunnel FET-Based Spiking Neuron for Energy-Efficient Neuromorphic Computing with Reduced Hardware Cost

A 4096-Neuron 1M-Synapse 3.8-pJ/SOP Spiking Neural Network With On-Chip STDP Learning and Sparse Weights in 10-nm FinFET CMOS

A New Compact Z$^{\text{2}}$-FET Model Based on Artificial Neural Network and Its Applications

A Low-power Artificial Spiking Neuron Based on Ionic Memristor for Modulated Frequency Coding

Band-to-Band Tunneling based Ultra-Energy Efficient Silicon Neuron

A Photosensitive Spiking Neuron Using a Single Band-Modulation Device with Tunable Spiking Sensitivity

SG‐FET Based Spiking Neuron With Ultra‐Low Energy Consumption for ECG Signal Classification

Ultra-low Energy charge trap flash based synapse enabled by parasitic leakage mitigation

An Energy efficient Leaky Integrate and Fire Neuron using Ge-Source TFET for Spiking Neural Network: Simulation Analysis

Quasi-Volatile MoS 2 Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation

Low-energy and tunable LIF neuron using SiGe bandgap-engineered resistive switching transistor

Progress and Benchmark of Spiking Neuron Devices and Circuits