Abstract:The two possible pathways toward artificial intelligence (AI)-(i) neuroscience-oriented neuromorphic computing [like spiking neural network (SNN)] and (ii) computer science driven machine learning (like deep learning) differ widely in their fundamental formalism and coding schemes (Pei et al., 2019). Deviating from traditional deep learning approach of relying on neuronal models with static nonlinearities, SNNs attempt to capture brain-like features like computation using spikes. This holds the promise of improving the energy efficiency of the computing platforms. In order to achieve a much higher areal and energy efficiency compared to today's hardware implementation of SNN, we need to go beyond the traditional route of relying on CMOS-based digital or mixed-signal neuronal circuits and segregation of computation and memory under the von Neumann architecture. Recently, ferroelectric field-effect transistors (FeFETs) are being explored as a promising alternative for building neuromorphic hardware by utilizing their non-volatile nature and rich polarization switching dynamics. In this work, we propose an all FeFET-based SNN hardware that allows low-power spike-based information processing and co-localized memory and computing (a.k.a. in-memory computing). We experimentally demonstrate the essential neuronal and synaptic dynamics in a 28 nm high-K metal gate FeFET technology. Furthermore, drawing inspiration from the traditional machine learning approach of optimizing a cost function to adjust the synaptic weights, we implement a surrogate gradient (SG) learning algorithm on our SNN platform that allows us to perform supervised learning on MNIST dataset. As such, we provide a pathway toward building energy-efficient neuromorphic hardware that can support traditional machine learning algorithms. Finally, we undertake synergistic device-algorithm co-design by accounting for the impacts of device-level variation (stochasticity) and limited bit precision of on-chip synaptic weights (available analog states) on the classification accuracy.

An Energy efficient Leaky Integrate and Fire Neuron using Ge-Source TFET for Spiking Neural Network: Simulation Analysis

A Biomimetic Tunnel FET-Based Spiking Neuron for Energy-Efficient Neuromorphic Computing with Reduced Hardware Cost

A Compact Artificial Spiking Neuron Using a Sharp-Switching FET with Ultra-Low Energy Consumption Down to 0.45 Fj/spike

Band-to-Band Tunneling based Ultra-Energy Efficient Silicon Neuron

Engineering Spiking Neurons Using Threshold Switching Devices for High-Efficient Neuromorphic Computing

Dynamics of Leaky Integrate‐and‐Fire Neurons Based on Oxyvanite Memristors for Spiking Neural Networks

Ultra-Low-Power Compact Neuron Circuit with Tunable Spiking Frequency and High Robustness in 22 Nm FDSOI

1T Spiking Neuron Using Ferroelectric Junctionless FET with Ultra-Low Energy Consumption of 24 aJ/Spike

Utilizing Forward Characteristics of Pocket Doped SiGe Tunnel FET for Designing LIF Neuron Model

SG‐FET Based Spiking Neuron With Ultra‐Low Energy Consumption for ECG Signal Classification

Supervised Learning in All FeFET-Based Spiking Neural Network: Opportunities and Challenges

Quantum Tunneling Based Ultra-Compact and Energy Efficient Spiking Neuron Enables Hardware SNN

Highly efficient neuromorphic learning system of spiking neural network with multi-compartment leaky integrate-and-fire neurons

Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices

Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

Design and Performance Analysis of an Ultra-Low Power Integrate-and-Fire Neuron Circuit Using Nanoscale Side-contacted Field Effect Diode Technology

Analog Spiking Neuron in CMOS 28 nm Towards Large-Scale Neuromorphic Processors

Low-energy and tunable LIF neuron using SiGe bandgap-engineered resistive switching transistor

Proposal for a Leaky-Integrate-Fire Spiking Neuron based on Magneto-Electric Switching of Ferro-magnets

Spiking Neural Network Integrated with Impact Ionization Field-Effect Transistor Neuron and a Ferroelectric Field-Effect Transistor Synapse

Artificial LIF Neuron with Bursting Behavior Based on Threshold Switching Device