Abstract:Multilevel magnetic states are generated by gradually modulating the magnetic easy‐axis orientation through the application of gate voltage pulses, enabling the creation of spintronic artificial synapses. Convolutional neural network and spiking neural network architectures leveraging these spintronic artificial synapses demonstrate high recognition accuracy for the MNIST dataset, along with improved energy efficiency and reduced circuit area. Neuromorphic computing offers energy‐efficient computations for large‐scale data processing compared to conventional von Neumann computing. The artificial synapse, a key element for learning and memory operations in neuromorphic computing, requires multi‐state characteristics and the capability to change and store its states. The implementation of hardware‐based artificial synapses using nonvolatile memory provides significant advantages in terms of energy consumption and circuit area compared to their currently employed CMOS‐based counterparts. In this regard, spintronic devices have emerged as a promising candidate due to their desirable properties for artificial synapses, including multilevel formability, non‐volatility, and outstanding writing performance. In this study, spintronic artificial synapses utilizing voltage‐controlled multilevel magnetic states and energy‐ and area‐efficient artificial neural network architectures associated with them are demonstrated. The multilevel states are created by gradually modulating the magnetic easy‐axis orientation from perpendicular to in‐plane and vice versa, which is achieved either by sequentially applying gate voltage pulses or by adjusting the pulse width of the gate voltage. Based on these spintronic artificial synapses, convolutional neural network (CNN) and spiking neural network (SNN) architectures are constructed, demonstrating high recognition accuracy for the MNIST dataset with improved energy efficiency and a reduced circuit area.

Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing

Spin-Based Neuron Model with Domain Wall Magnets as Synapse

Stochastic Spintronic Device Based Synapses and Spiking Neurons for Neuromorphic Computation

A spintronic Huxley-Hodgkin-analogue neuron implemented with a single magnetic tunnel junction

Spin-NeuroMem: A Low-Power Neuromorphic Associative Memory Design Based on Spintronic Devices

Spintronic Artificial Synapses Using Voltage‐Controlled Multilevel Magnetic States

Proposal for an All-Spin Artificial Neural Network: Emulating Neural and Synaptic Functionalities Through Domain Wall Motion in Ferromagnets

Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware

Spintronic Devices As Key Elements for Energy-Efficient Neuroinspired Architectures.

Magnetic Field Gated and Current Controlled Spintronic Mem-transistor Neuron -based Spiking Neural Networks

A Proposal for Energy-Efficient Cellular Neural Network based on Spintronic Devices

Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Spin Wave Based Synapse and Neuron for Ultra Low Power Neuromorphic Computation System.

Synergy of Spin-Orbit Torque and Built-In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons

Pure voltage-driven spintronic neuron based on stochastic magnetization switching behaviour

Tunable magnetic synapse for reliable neuromorphic computing

Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices

A proposal for leaky integrate-and-fire neurons by domain walls in antiferromagnetic insulators

Energy-efficient neuromorphic computation based on compound spin synapse with stochastic learning