Postcataract ptosis. A randomized, double-masked comparison of peribulbar and retrobulbar anesthesia.

R. Feibel,P. Custer,M. Gordon

DOI: https://doi.org/10.1016/S0161-6420(93)31592-7

1993-05-01

Abstract:

What problem does this paper attempt to address?

Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware

Long Liu,Di Wang,Dandan Wang,Yan Sun,Huai Lin,Xiliang Gong,Yifan Zhang,Ruifeng Tang,Zhihong Mai,Zhipeng Hou,Yumeng Yang,Peng Li,Lan Wang,Qing Luo,Ling Li,Guozhong Xing,Ming Liu

DOI: https://doi.org/10.1038/s41467-024-48631-4

2024-05-28

Abstract:We report a breakthrough in the hardware implementation of energy-efficient all-spin synapse and neuron devices for highly scalable integrated neuromorphic circuits. Our work demonstrates the successful execution of all-spin synapse and activation function generator using domain wall-magnetic tunnel junctions. By harnessing the synergistic effects of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in selectively etched spin-orbit coupling layers, we achieve a programmable multi-state synaptic device with high reliability. Our first-principles calculations confirm that the reduced atomic distance between 5d and 3d atoms enhances Dzyaloshinskii-Moriya interaction, leading to stable domain wall pinning. Our experimental results, supported by visualizing energy landscapes and theoretical simulations, validate the proposed mechanism. Furthermore, we demonstrate a spin-neuron with a sigmoidal activation function, enabling high operation frequency up to 20 MHz and low energy consumption of 508 fJ/operation. A neuron circuit design with a compact sigmoidal cell area and low power consumption is also presented, along with corroborated experimental implementation. Our findings highlight the great potential of domain wall-magnetic tunnel junctions in the development of all-spin neuromorphic computing hardware, offering exciting possibilities for energy-efficient and scalable neural network architectures.
The Combined Effect of Spin-transfer Torque and Voltage-controlled Strain Gradient on Magnetic Domain-wall Dynamics: Toward Tunable Spintronic Neuron

Guo-Liang Yu,Xin-Yan He,Sheng-Bin Shi,Yang Qiu,Ming-Min Zhu,Jia-Wei Wang,Yan Li,Yuan-Xun Li,Jie Wang,Hao-Miao Zhou

DOI: https://doi.org/10.1088/0256-307x/41/5/057502

2024-04-19

Chinese Physics Letters

Abstract:Magnetic domain wall (DW), as one of the promising information carriers in spintronic devices, have been widely investigated owing to their nonlinear dynamics and tunable properties. Here, we have theoretically and numerically demonstrated the DW dynamics driven by the synergistic interaction between current-induced spintransfer torque (STT) and voltage-controlled strain gradient (VCSG) in multiferroic heterostructures. Through electromechanical and micromagnetic simulations, we have shown that a desirable strain gradient can be created and further modulated the equilibrium position and velocity of the current-driven DW motion. Meanwhile, an analytical Thiele's model is developed to describe the steady motion of DW and the analytical results are quite consistent with the simulation one. Finally, we find that this combination effect can be leveraged to design DW-based biological neurons where the synergistic interaction between STT and VCSG-driven DW motion as integrating and leaking motivates mimicking leaky-integrate-and-fire (LIF) and self-reset function. Importantly, the firing response of the LIF neuron can be efficiently modulated, facilitating the exploration of tunable activation function generators, which can further help improve the computational capability of the neuromorphic system.

physics, multidisciplinary
Tunable magnetic synapse for reliable neuromorphic computing

Hongming Mou,Zhaochu Luo,Xiaozhong Zhang

DOI: https://doi.org/10.1063/5.0210317

IF: 4

2024-07-22

Applied Physics Letters

Abstract:Artificial neural networks (ANNs), inspired by the structure and function of the human brain, have achieved remarkable success in various fields. However, ANNs implemented using conventional complementary metal oxide semiconductor technology face significant limitations. This has prompted exploration of nonvolatile memory technologies as potential solutions to overcome these limitations by integrating storage and computation within a single device. These emerging technologies can retain resistance values without power, allowing them to serve as analog weights in ANNs, mimicking the behavior of biological synapses. While promising, these nonvolatile devices often exhibit inherent nonlinear relationships between resistance and applied voltage, complicating training processes and potentially impacting learning accuracy. This article proposes a magnetic synapse device based on the spin–orbit torque effect with geometrically controlled linear and nonlinear response characteristics. The device consists of a magnetic multilayer stack patterned into a designed shape, where the width variation along the current flow direction allows for controllable magnetic domain wall propagation. Through finite element method simulations and experimental studies, we demonstrate that by engineering the device geometry, a linear relationship between the applied current and the resulting Hall resistance can be achieved, mimicking the desired linear weight-input behavior in artificial neural networks. Additionally, this study explores the influence of current pulse width on the response curves, revealing a deviation from linearity at longer pulse durations. The geometric tunability of the magnetic synapse device offers a promising approach for realizing reliable and energy-efficient neuromorphic computing architectures.

physics, applied
Leaky-Integrate-Fire Neuron via Synthetic Antiferromagnetic Coupling and Spin-Orbit Torque

Badsha Sekh,Durgesh Kumar,Hasibur Rahaman,Ramu Maddu,Jianpeng Chan,Wai Lum William Mah,S.N. Piramanayagam

2024-08-16

Abstract:Neuromorphic computing (NC) is a promising candidate for artificial intelligence applications. To realize NC, electronic analogues of brain components, such as synapses and neurons, must be designed. In spintronics, domain wall (DW) based magnetic tunnel junctions - which offer both synaptic and neuronal functionalities - are one of the promising candidates. An electronic neuron should exhibit leaky-integrate-fire functions similar to their biological counterparts. However, most experimental studies focused only on the integrate-and-fire functions, overlooking the leaky function. Here, we report on a domain wall neuron device that achieves integration using spin-orbit torque-induced domain wall motion and a leaky function via synthetic antiferromagnetic coupling. By fabricating Hall bar devices in a special geometry, we could achieve these two functionalities. During the leaky process, the maximum DW velocity achieved was 2500 {\mu}m/s. The proposed design utilizes materials used in STT-MRAM fabrication and is compatible with CMOS fabrication. Therefore, this neuron can be readily integrated into NC.

Applied Physics
Emulation of neuron and synaptic functions in spin-orbit torque domain wall devices

Durgesh Kumar,Ramu Maddu,Hong Jing Chung,Hasibur Rahaman,Tianli Jin,Sabpreet Bhatti,Sze Ter Lim,Rachid Sbiaa,S N Piramanayagam

DOI: https://doi.org/10.1039/d3nh00423f

2024-10-21

Abstract:Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To realize spin-based NC architecture, the computing elements such as synthetic neurons and synapses need to be developed. However, there are very few experimental investigations on DW neurons and synapses. The present study demonstrates the energy-efficient operations of neurons and synapses by using novel reading and writing strategies. We have used a W/CoFeB-based energy-efficient SOT mechanism to drive the DWs at low current densities. We have used the concept of meander devices for achieving synaptic functions. By doing this, we have achieved 9 different resistive states in experiments. We have experimentally demonstrated the functional spike and step neurons. Additionally, we have engineered the anomalous Hall bars by incorporating several pairs, in comparison to conventional Hall crosses, to increase the sensitivity as well as signal-to-noise ratio (SNR). We have performed micromagnetic simulations and transport measurements to demonstrate the above-mentioned functionalities.
Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Louis Farcis,Bruno Teixeira,Philippe Talatchian,David Salomoni,Ursula Ebels,Stéphane Auffret,Bernard Dieny,Frank Mizrahi,Julie Grollier,Ricardo Sousa,Liliana Buda-Prejbeanu

2023-09-14

Abstract:Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions enable to emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device. The field-free operation of this two terminal device and its robustness against an externally applied magnetic field make it a suitable candidate to mimic neuron response in a dense Neural Network (NN). The small energy consumption of the device (4-16 pJ/spike) and its scalability are important benefits for embedded applications. This compact perpendicular magnetic tunnel junction structure could finally bring spiking neural networks (SNN) to sub-100nm size elements.

Applied Physics
Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

Di Wang,Ruifeng Tang,Huai Lin,Long Liu,Nuo Xu,Yan Sun,Xuefeng Zhao,Ziwei Wang,Dandan Wang,Zhihong Mai,Yongjian Zhou,Nan Gao,Cheng Song,Lijun Zhu,Tom Wu,Ming Liu,Guozhong Xing

DOI: https://doi.org/10.1038/s41467-023-36728-1

IF: 16.6

2023-02-24

Nature Communications

Abstract:Abstract Neuromorphic computing using nonvolatile memories is expected to tackle the memory wall and energy efficiency bottleneck in the von Neumann system and to mitigate the stagnation of Moore’s law. However, an ideal artificial neuron possessing bio-inspired behaviors as exemplified by the requisite leaky-integrate-fire and self-reset (LIFT) functionalities within a single device is still lacking. Here, we report a new type of spiking neuron with LIFT characteristics by manipulating the magnetic domain wall motion in a synthetic antiferromagnetic (SAF) heterostructure. We validate the mechanism of Joule heating modulated competition between the Ruderman–Kittel–Kasuya–Yosida interaction and the built-in field in the SAF device, enabling it with a firing rate up to 17 MHz and energy consumption of 486 fJ/spike. A spiking neuron circuit is implemented with a latency of 170 ps and power consumption of 90.99 μW. Moreover, the winner-takes-all is executed with a current ratio >10 4 between activated and inhibited neurons. We further establish a two-layer spiking neural network based on the developed spintronic LIFT neurons. The architecture achieves 88.5% accuracy on the handwritten digit database benchmark. Our studies corroborate the circuit compatibility of the spintronic neurons and their great potential in the field of intelligent devices and neuromorphic computing.

multidisciplinary sciences
Magnetic Field Gated and Current Controlled Spintronic Mem-transistor Neuron -based Spiking Neural Networks

Aijaz H. Lone,Meng Tang,Daniel N. Rahimi,Xuecui Zou,Dongxing Zheng,Hossein Fariborzi,Xixiang Zhang,Gianluca Setti

2024-02-06

Abstract:Spintronic devices, such as the domain walls and skyrmions, have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. In recent years, spiking neural networks have shown more bio-plausibility. Based on the magnetic multilayer spintronic devices, we demonstrate the magnetic field-gated Leaky integrate and fire neuron characteristics for the spiking neural network applications. The LIF characteristics are controlled by the current pulses, which drive the domain wall, and an external magnetic field is used as the bias to tune the firing properties of the neuron. Thus, the device works like a gate-controlled LIF neuron, acting like a spintronic Mem-Transistor device. We develop a LIF neuron model based on the measured characteristics to show the device integration in the system-level SNNs. We extend the study and propose a scaled version of the demonstrated device with a multilayer spintronic domain wall magnetic tunnel junction as a LIF neuron. using the combination of SOT and the variation of the demagnetization energy across the thin film, the modified leaky integrate and fire LIF neuron characteristics are realized in the proposed devices. The neuron device characteristics are modeled as the modified LIF neuron model. Finally, we integrate the measured and simulated neuron models in the 3-layer spiking neural network and convolutional spiking neural network CSNN framework to test these spiking neuron models for classification of the MNIST and FMNIST datasets. In both architectures, the network achieves classification accuracy above 96%. Considering the good system-level performance, mem-transistor properties, and promise for scalability. The presented devices show an excellent properties for neuromorphic computing applications.

Applied Physics,Mesoscale and Nanoscale Physics
Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing

Steven Louis,Hannah Bradley,Cody Trevillian,Andrei Slavin,Vasyl Tyberkevych

2024-10-18

Abstract:This paper proposes a novel spiking artificial neuron design based on a combined spin valve/magnetic tunnel junction (SV/MTJ). Traditional hardware used in artificial intelligence and machine learning faces significant challenges related to high power consumption and scalability. To address these challenges, spintronic neurons, which can mimic biologically inspired neural behaviors, offer a promising solution. We present a model of an SV/MTJ-based neuron which uses technologies that have been successfully integrated with CMOS in commercially available applications. The operational dynamics of the neuron are derived analytically through the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation, demonstrating its ability to replicate key spiking characteristics of biological neurons, such as response latency and refractive behavior. Simulation results indicate that the proposed neuron design can operate on a timescale of about 1 ns, without any bias current, and with power consumption as low as 50 uW.

Applied Physics,Disordered Systems and Neural Networks
Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Xueying Zhang,Wenlong Cai,Mengxing Wang,Biao Pan,Kaihua Cao,Maosen Guo,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Lin Wang,Fazhan Shi,Jiangfeng Du,Weisheng Zhao

DOI: https://doi.org/10.1002/advs.202004645

IF: 15.1

2021-03-08

Advanced Science

Abstract:<p>Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite memristive behavior for neuromorphic computing and large‐density non‐volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current‐induced switching in a single device pose difficulties in physical implementation. Here, a nanoscale spin‐torque memristor based on a perpendicular‐anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure is experimentally demonstrated. Its tunneling magnetoresistance is higher than 200%, and memristive behavior can be realized by spin‐transfer torque switching. Memristive states are retained by strong domain wall pinning effects in the free layer. Experiments and simulations suggest that nanoscale vertical chiral spin textures can form around clusters of W atoms under the combined effect of opposite Dzyaloshinskii–Moriya interactions and the Ruderman–Kittel–Kasuya–Yosida interaction between the two CoFeB free layers. Energy fluctuation caused by these textures may be the main reason for the strong pinning effect. With the experimentally demonstrated memristive behavior and spike‐timing‐dependent plasticity, a spiking neural network to perform handwritten pattern recognition in an unsupervised manner is simulated. Due to advantages such as long endurance and high speed, the spin‐torque memristors are competitive in the future applications for neuromorphic computing.</p>

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Kequn Chi,Yinuo Shi,Zhou Li,Wenbiao Zhang,Yun Xing,Xiang Feng,Yungui Ma,Hao Meng,Bo Liu

DOI: https://doi.org/10.1088/1361-6463/abf61d

2021-01-01

Abstract:Magnetic tunneling junctions with strong perpendicular shape anisotropy attract attention due to their high-density magnetic random access memory. As thermal stability increases, the power consumption also increases. To solve this problem, devices are made to be driven by spin-orbit torque (SOT) instead of spin-transfer torque. However, the assisting field needed for deterministic switching is a major obstacle for SOT devices. In this work, we demonstrate an L-shaped electrode structure attached to the magnetic recording layer to induce a composite SOT, achieving high-speed and field-free magnetization switching. Meanwhile, a comparative study between L-shaped and sidewall electrode structure demonstrates that the L-shaped structure leads to fast and low-power switching. Finally, the switching characteristic at various current densities and spin Hall angles is studied and it turns out that to achieve high-speed reversal, the current density and the spin Hall angle need to be optimized, which might be attributed to strong in-plane effective field component disturbance. The novel L-shaped structure is feasible for high-speed, low-power and deterministic switching and has great potential in spintronic applications.
Electrically Reconfigurable 3D Spin‐Orbitronics

Yiqing Dong,Teng Xu,Heng-An Zhou,Li Cai,Huaqiang Wu,Jianshi Tang,Wanjun Jiang

DOI: https://doi.org/10.1002/adfm.202007485

IF: 19

2021-01-01

Advanced Functional Materials

Abstract:The explosive demands of storage capacity and the von Neumann bottleneck of modern computer architectures trigger many innovations in information technology. Amongst them, nonvolatile spintronics attract considerable attentions for which can embed the computation capability into memory, enable neuromorphic, and probabilistic computing. These exciting progresses typically rely on the manipulation of the relative magnetization orientations of two magnetic layers. By extending to 3D spintronic architectures made of multiple magnetic layers (n), the exponentially increased 2n magnetic states can provide ample opportunities for implementing novel spintronic functionalities. Here, through building perpendicularly magnetized 3D spin‐orbitronic architectures – [Pt/Fe1−xTbx/Si3N4]n multilayers, it is demonstrated the electrical programing of 2n memory states via current‐induced spin–orbit torques (SOTs), and the accompanied reconfigurable multifunction in‐memory logic features in a single four‐terminal Hall device. Further, an electrical readout of these 2n states, together with the implementation of Boolean logic gates and digital circuitry such as 2–4 and 3–8 decoders, are successfully conducted. More complex logic circuits are also envisioned. The experiments thus substantiate 3D spin‐orbitronic structures as a promising platform for exponentially boosting the storage capacity and accommodating in‐memory computing that can be important for promoting the emerging 3D nanospintronics.
Design of Spintronics-based Neuronal and Synaptic Devices for Spiking Neural Network Circuits

Debasis Das,Yunuo Cen,Jianze Wang,Xuanyao Fong

DOI: https://doi.org/10.48550/arXiv.2211.06630

2022-11-12

Abstract:Topologically stable magnetic skyrmion has a much lower depinning current density that may be useful for memory as well as neuromorphic computing. However, skyrmion-based devices suffer from the Magnus force originating from the skyrmion Hall effect, which may result in unwanted skyrmion annihilation if the magnitude of the driving current gets too large. A design of an artificial neuron and a synapse using a synthetic antiferromagnetically coupled bilayer device, which nullifies the Magnus force, is demonstrated in this work. The leak term in the artificial leaky integrate-and-fire neuron is achieved by engineering the uniaxial anisotropy profile of the neuronal device. The synaptic device has a similar structure as the neuronal device but has a constant uniaxial anisotropy. The synaptic device also has a linear and symmetric weight update, which is a highly desirable trait of an artificial synapse. Neuronal and synaptic devices based on magnetic domain-wall (DW) motion are also studied and compared to skyrmionic devices. Our simulation results show the energy required to perform such operation in DW or skyrmion-based devices is on the order of a few fJ.

Mesoscale and Nanoscale Physics
Neuroscience-inspired Information-Integration System Based on Stochastic Magnetic Tunnel Junctions

Li Zhao,Meiting Zhang,Yajun Zhang,Yuanyuan Mi,Zhe Yuan,Ke Xia

DOI: https://doi.org/10.1103/physrevapplied.21.064040

IF: 4.6

2024-01-01

Physical Review Applied

Abstract:Effective integration of multiple sensory information in the brain is essential to achieve accurate information perception and processing despite the noise and imperfections in biological neural systems, providing strong inspiration for improving computational accuracy in neuromorphic computing. In the future development of brainlike chips, e.g., biomimetic robots, multisensory-information integration is an essential capability for recognizing the external circumstances. Here, based on the computational model proposed by neuroscientists, we propose a hardware implementation scheme of the decentralized multisensory information-integration system using spintronic devices, in which magnetic tunnel junctions are employed as artificial neurons with stochastic dynamics. Using a one-dimensional continuous variable (orientation, head direction, etc.) as a typical example, we demonstrate that the input information from noisy cues is extracted with high accuracy after integration. This spintronic neuromorphic system exhibits remarkable tolerance for both nonuniform devices and the malfunction of different modules. The computational advantages and robustness of the spintronics-based information-integration system provide an important basis for the development of hardware neuromorphic platforms.
Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices

Cheng Wang,Chankyu Lee,Kaushik Roy

DOI: https://doi.org/10.1038/s41598-022-12555-0

2022-05-19

Abstract:The capability of emulating neural functionalities efficiently in hardware is crucial for building neuromorphic computing systems. While various types of neuro-mimetic devices have been investigated, it remains challenging to provide a compact device that can emulate spiking neurons. In this work, we propose a non-volatile spin-based device for efficiently emulating a leaky integrate-and-fire neuron. By incorporating an exchange-coupled composite free layer in spin-orbit torque magnetic tunnel junctions, multi-domain magnetization switching dynamics is exploited to realize gradual accumulation of membrane potential for a leaky integrate-and-fire neuron with compact footprints. The proposed device offers significantly improved scalability compared with previously proposed spin-based neuro-mimetic implementations while exhibiting high energy efficiency and good controllability. Moreover, the proposed neuron device exhibits a varying leak constant and a varying membrane resistance that are both dependent on the magnitude of the membrane potential. Interestingly, we demonstrate that such device-inspired dynamic behaviors can be incorporated to construct more robust spiking neural network models, and find improved resiliency against various types of noise injection scenarios. The proposed spintronic neuro-mimetic devices may potentially open up exciting opportunities for the development of efficient and robust neuro-inspired computational hardware.
Modeling of Spin Orbit Torque Driven Domain Wall Device for All-Spin Neural Network

Seema Dhull,Arshid Nisar,Gaurav Verma,Brajesh Kumar Kaushik

DOI: https://doi.org/10.1109/ted.2024.3420828

IF: 3.1

2024-07-26

IEEE Transactions on Electron Devices

Abstract:Domain wall (DW) devices have emerged as promising candidates for ultrafast and low power spintronic computing systems. However, the hardware implementation of these systems requires device models that are capable of describing all the underlying physical phenomena more accurately. This article presents a robust compact model that efficiently predicts the motion of DW under the influence of current induced spin Hall effect (SHE) and incorporates the effects of Dzyaloshinskii-Moriya interaction (DMI), longitudinal magnetic field, and thermal fluctuations to determine the position of the DW. The proposed model achieves a velocity of ~400 m/s that matches well with the micromagnetic simulations with an error of less than ±5%. Furthermore, the proposed model is also demonstrated to capture the behavior of leaky-integrate-fire (LIF) neuron and synapse. To enhance the robustness of the model, process variations have been incorporated to enable the analysis and optimization of DW-magnetic tunnel junction (DW-MTJ) based neuron and synapse. Finally, an all-spin neural network (NN) is implemented on MNIST dataset for image classification. The proposed DW-MTJ based NN achieves a training accuracy of 92.4% and it shows better performance in terms of area, energy, and latency when compared to NNs based other technologies such as spin transfer torque (STT)-MTJ, spin orbit torque (SOT)-MTJ, resistive random access memory (RRAM), phase change RAM (PCRAM), and ferroelectric-RAM (FeRAM).

engineering, electrical & electronic,physics, applied
A proposal for leaky integrate-and-fire neurons by domain walls in antiferromagnetic insulators

Verena Brehm,Johannes W. Austefjord,Serban Lepadatu,Alireza Qaiumzadeh

DOI: https://doi.org/10.1038/s41598-023-40575-x

2023-08-18

Abstract:Brain-inspired neuromorphic computing is a promising path towards next generation analogue computers that are fundamentally different compared to the conventional von Neumann architecture. One model for neuromorphic computing that can mimic the human brain behavior are spiking neural networks (SNNs), of which one of the most successful is the leaky integrate-and-fire (LIF) model. Since conventional complementary metal-oxide-semiconductor (CMOS) devices are not meant for modelling neural networks and are energy inefficient in network applications, recently the focus shifted towards spintronic-based neural networks. In this work, using the advantage of antiferromagnetic insulators, we propose a non-volatile magnonic neuron that could be the building block of a LIF spiking neuronal network. In our proposal, an antiferromagnetic domain wall in the presence of a magnetic anisotropy gradient mimics a biological neuron with leaky, integrating, and firing properties. This single neuron is controlled by polarized antiferromagnetic magnons, activated by either a magnetic field pulse or a spin transfer torque mechanism, and has properties similar to biological neurons, namely latency, refraction, bursting and inhibition. We argue that this proposed single neuron, based on antiferromagnetic domain walls, is faster and has more functionalities compared to previously proposed neurons based on ferromagnetic systems.

Disordered Systems and Neural Networks,Mesoscale and Nanoscale Physics,Materials Science,Emerging Technologies
Tilted perpendicular anisotropy-induced spin-orbit ratchet effects

Bin Chen,Yuantu Long,Yulin Nie,Ziyu Ling,Tianping Ma,Ruixuan Zhang,Yizheng Wu,Yongming Luo,Ningning Wang

DOI: https://doi.org/10.1088/0256-307x/41/7/078501

2024-06-13

Chinese Physics Letters

Abstract:Using micromagnetic simulations, in this study we demonstrate the tilted perpendicular anisotropy -induced spin-orbit ratchet effect. During spin-orbit torque (SOT)-induced magnetization switching, the critical currents required to switch between the two magnetization states (upward and downward magnetization) are asymmetric. In addition, in the nanowire structure, tilted anisotropy induces formation of tilted domain walls (DWs). The tilted DWs exhibit a ratchet behavior during motion. The ratchet effect during switching and DW motions can be tuned by changing the current direction with respect to the tilting direction of anisotropy. The ratchet motion of the DWs can be used to mimic the Leaky–Integrate–Fire function of a biological neuron, especially the asymmetric property of the "potential" and "reset" processes. Our results provide a full understanding of the influence of tilted perpendicular anisotropy on SOT-induced magnetization switching and DW motion, and are beneficial for design of further SOT-based devices.

physics, multidisciplinary
Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Lei Guo,Guopeng Shi,Guocai Wang,Hua Su,Huaiwu Zhang,Xiaoli Tang

DOI: https://doi.org/10.1002/advs.202403648

Abstract:Antiferromagnets are competitive candidates for the next generation of spintronic devices owing to their superiority in small-scale and low-power-consumption devices. The electrical manipulation of the magnetization and exchange bias (EB) driven by spin-orbit torque (SOT) in ferromagnetic (FM)/antiferromagnetic (AFM) systems has become focused in spintronics. Here, the realization of a large perpendicular EB field in Co/IrMn and the effective manipulation of the magnetic moments of the magnetic Co layer and EB field by SOT in Pt/Co/IrMn system is reported. During the SOT-driven switching process, an asymmetrically manipulated state is observed. Current pulses with the same amplitude but opposite directions induce different magnetization states. Magneto-optical Kerr measurements reveal that this is due to the coexistence of stable and metastable antiferromagnetic domains in the AFM. Exploiting the asymmetric properties of these FM/AFM structures, five spin logic gates, namely AND, OR, NOR, NAND, and NOT, are realized in a single cell via SOT. This study provides an insight into the special ability of SOT on AFMs and also paves an avenue to construct the logic-in-memory and neuromorphic computing cells based on the AFM spintronic system.
Spin-torque devices with hard axis initialization as Stochastic Binary Neurons

Vaibhav Ostwal,Punyashloka Debashis,Rafatul Faria,Zhihong Chen,Joerg Appenzeller

DOI: https://doi.org/10.1038/s41598-018-34996-2

2018-11-12

Abstract:Employing the probabilistic nature of unstable nano-magnet switching has recently emerged as a path towards unconventional computational systems such as neuromorphic or Bayesian networks. In this letter, we demonstrate proof-of-concept stochastic binary operation using hard axis initialization of nano-magnets and control of their output state probability (activation function) by means of input currents. Our method provides a natural path towards addition of weighted inputs from various sources, mimicking the integration function of neurons. In our experiment, spin orbit torque (SOT) is employed to "drive" nano-magnets with perpendicular magnetic anisotropy (PMA) -to their metastable state, i.e. in-plane hard axis. Next, the probability of relaxing into one magnetization state (+mi) or the other (-mi) is controlled using an Oersted field generated by an electrically isolated current loop, which acts as a "charge" input to the device. The final state of the magnet is read out by the anomalous Hall effect (AHE), demonstrating that the magnetization can be probabilistically manipulated and output through charge currents, closing the loop from charge-to-spin and spin-to-charge conversion. Based on these building blocks, a two-node directed network is successfully demonstrated where the status of the second node is determined by the probabilistic output of the previous node and a weighted connection between them. We have also studied the effects of various magnetic properties, such as magnet size and anisotropic field on the stochastic operation of individual devices through Monte Carlo simulations of Landau Lifshitz Gilbert (LLG) equation. The three-terminal stochastic devices demonstrated here are a critical step towards building energy efficient spin based neural networks and show the potential for a new application space.

Postcataract ptosis. A randomized, double-masked comparison of peribulbar and retrobulbar anesthesia.

Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware

The Combined Effect of Spin-transfer Torque and Voltage-controlled Strain Gradient on Magnetic Domain-wall Dynamics: Toward Tunable Spintronic Neuron

Tunable magnetic synapse for reliable neuromorphic computing

Leaky-Integrate-Fire Neuron via Synthetic Antiferromagnetic Coupling and Spin-Orbit Torque

Emulation of neuron and synaptic functions in spin-orbit torque domain wall devices

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing

Magnetic Field Gated and Current Controlled Spintronic Mem-transistor Neuron -based Spiking Neural Networks

Spintronic Neuron Using a Magnetic Tunnel Junction for Low-Power Neuromorphic Computing

Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Electrically Reconfigurable 3D Spin‐Orbitronics

Design of Spintronics-based Neuronal and Synaptic Devices for Spiking Neural Network Circuits

Neuroscience-inspired Information-Integration System Based on Stochastic Magnetic Tunnel Junctions

Noise resilient leaky integrate-and-fire neurons based on multi-domain spintronic devices

Modeling of Spin Orbit Torque Driven Domain Wall Device for All-Spin Neural Network

A proposal for leaky integrate-and-fire neurons by domain walls in antiferromagnetic insulators

Tilted perpendicular anisotropy-induced spin-orbit ratchet effects

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Spin-torque devices with hard axis initialization as Stochastic Binary Neurons