Abstract:Negative capacitance field-effect transistors (NC-FETs) have attracted wide interest as promising candidates for steep-slope devices, and sub-60 mV/decade switching has been demonstrated in NC-FETs with various device structures and material systems. However, the detailed mechanisms of the observed steep-slope switching in some of these experiments are under intense debate. Here we show that sub-60 mV/decade switching can be observed in a WS2 transistor with a metal-insulator-metal-insulator-semiconductor (MIMIS) structure - without any ferroelectric component. This structure resembles an NC-FET with internal gate, except that the ferroelectric layer is replaced by a leaky dielectric layer. Through simulations of the charging dynamics during the device characterization using an RC network model, we show that the observed steep-slope switching in our "ferroelectric-free" transistors can be attributed to the internal gate voltage response to the chosen varying gate voltage scan rates. We further show that a constant gate voltage scan rate can also lead to transient sub-60 mV/decade switching in an MIMIS structure with voltage dependent internal gate capacitance. Our results indicate that the observation of sub-60 mV/decade switching alone is not sufficient evidence for the successful demonstration of a true steep-slope switching device and that experimentalists need to critically assess their measurement setups to avoid measurement-related artefacts.

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Multi-Physics Evaluation of Silicon Steep-Slope Cold Source FET

Sub-60 mV/decade switching in a metal-insulator-metal-insulator-semiconductor transistor without ferroelectric component

Design and Simulation of Steep-Slope Silicon Cold Source FETs With Effective Carrier Distribution Model

Sharp-Switching Soi Devices

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Sharp-Switching High-Current Tunneling Devices

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Performance Improvement of Si Pocket-Tunnel Fet with Steep Subthreshold Slope and High I-On/I-Off Ratio

High performance tunnel field-effect transistor by gate and source engineering.