Abstract:The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H2 flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H2 flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H2 flux, and the lowest resistivity of 4.02 × 10−4 Ω cm is obtained at a H2 flux of 10 sccm. The average transmittance in the visible region shows little dependence on H2 flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H2 flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H2 exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H2, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of Eg increases with the increase in carrier concentration due to Burstein–Moss effect.

Influence of Annealing in Argon on Properties of Al-doped Zinc Oxide Films

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

Characteristics of Al-doped ZnO Thin Films Prepared in Ar + H2 Atmosphere and Their Vacuum Annealing Behavior

Influence of Postdeposition Annealing on Crystallinity of Zinc Oxide Films

Annealing effect on mechanical properties of RF magnetron sputtering ZnO thin film

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films

Effects of Annealing at Ar Ambient on the Physical Properties of Zn0.66Co0.34O Thin Film

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

The investigation of structural, surface topography, and optical behaviors of Al-doped ZnO thin films with annealing temperature deposited by RF magnetron sputtering

Effect of annealing on optical properties of Mg(x)Zn(1-x)Othin films deposited at low temperature

MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Role of annealing environments on the local electronic and optical properties of zinc oxide films

Influence of Hydrogen on Al-doped ZnO Thin Films in the Process of Deposition and Annealing

Effect of Annealing on Conductivity Behavior of Undoped Zinc Oxide Prepared by Rf Magnetron Sputtering

Thermal annealing effect on optical properties of electrodeposited ZnO thin films

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

Effect of oxygen annealing temperature on properties of spatial atomic layer deposited aluminum-doped zinc oxide films