Structure and Photoluminescence Properties of Heterostructure SiC/Si Prepared by MEVVA Ion Implantation at Room Temperature

Dihu Chen

2005-01-01

Abstract:The intense visible photoluminescence(PL) of porous Si has attracted much interest as it opens up the possibility of fabricating light-emitting devices based on silicon technology.Silicon carbide,especially(cubic) phase(β-SiC),is an attractive material for applications in high-temperature and high-power electronic devices for its wide band gap,high thermal conductivity and high electron saturation velocity.The development of SiC for opto-electronic applications has been the subject of intensive research for a long time.We report a preparation of SiC/Si heterostructure by ion implantation of overstoichiometric C~+ to single crystalline silicon substrate with a MEVVA(metal vapor vacuum arc) ion source,then a thermal annealing is performed,β-SiC layer is formed after that,which indicates that surface SiC/Si heterostructure is successfully prepared.The phase transformation characteristics in these SiC layers were studied using FTIR spectroscopy and a de-convolution scheme of the IR spectra into amorphous SiC and β-SiC components.X-ray Photon Spectroscopy(XPS) study the attribute of the C atom,the Atom Force Microscopy(AFM) images show the surface morphology of the annealed samples.The photoluminescence(PL) properties of the as-implanted and annealed samples was studied under the excitation of 355 nm.PL spectra show that there are two main peaks: 430 nm(2.9 eV) and 560 nm(2.2 eV),the PL intensity achieves the maximum at annealing temperature of 900 ℃,2 h.A nanoscale SiC unit quantum confinement theory and surface state theory are used to explain the phenomenon,it was indicated that the nano SiC and bulk SiC play key role in the PL process,and the surface stat of the SiC nanorod also.