Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Electron Field Emission from SiC∕Si Heterostructures by High Temperature Carbon Implantation into Silicon

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Electron Field Emission Studies from Amorphous Carbon Thin Films

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

Field Emission from As Grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon/Silicon Heterojunctions Grown Using A Pulsed Filtered Cathodic Vacuum Arc Technique

High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Field electron emission from silicon carbide nanowires prepared on stainless steel substrate

Field Electron Emission of Si Nanotips with Apexes of Various Compositions

Self-modulated Field Electron Emitter: Gated Device of Integrated Si Tip-on-nano-channel

Field emission of uniform carbon cone arrays grown on porous silicon substrate

Well-aligned SiC nanoneedle arrays for excellent field emitters

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Needle-Shaped Silicon Carbide Nanowires: Synthesis and Field Electron Emission Properties

2.5: Enhanced Field Emission from Nanowires of Silicon Carbide by Thermal Heating

Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation