Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Nonvolatile and Volatile Resistive Switching - Characterization, Modeling, Memristive Subcircuits

Reversible Transition of Volatile to Non-Volatile Resistive Switching in Cu/SiNx/ZnO/Pt Memristor

Nanoscale resistive switching devices: mechanisms and modeling.

Nonvolatile Resistive Switching Memories-Characteristics, Mechanisms and Challenges

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

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Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

Resistive Switching Mechanisms for Nonvolatile Resistive Random Access Memory Based on I-V Characteristic

Ab Initio Modeling Of Resistive Switching Mechanism In Binary Metal Oxides

Quantum Point Contact Model of Filamentary Conduction in Resistive Switching Memories

Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

In-Situ TEM Observation of Resistive Switching Behaviors by in Nonvolatile Memory

Recent Advances in Resistive Switching Materials and Devices: from Memories to Memristors

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Engineering resistive switching behavior in TAO<inf>x</inf> based memristive devices for non-von Neuman computing applications

Resistive Switching and Changes in Microstructure

Memristors for Memory and Computing Applications

Device Simulation and Modeling of RRAM Switching Processes