Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Nonvolatile and Volatile Resistive Switching Characteristics in MoS2 Thin Film for RRAM Application

Nonvolatile and volatile resistive switching characteristics in MoS 2 thin film for RRAM application

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Resistive Switching Mechanisms for Nonvolatile Resistive Random Access Memory Based on I-V Characteristic

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Investigation of resistive switching behaviours in WO3-based RRAM devices

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Self- Compliance Unipolar Resistive Switching and Mechanism of Cu/SiO2/TiN RRAM Devices

Metal Penetration and Grain Boundary in MoS2 Memristors

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

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Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Improved resistive switching performance and mechanism analysis of MoO 3 nanorods based memristors

Multilevel Resistive Switching in Ag/Sio2/Pt Resistive Switching Memory Device

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Atomic‐Scale Phase Transformation in Perovskite LaCoOx Resistive Switching Memristive Devices

Nonvolatile MOX RRAM assisted by graphene and 2D materials

Unveiling switching mechanisms in RRAMs