Resistive Switching and Changes in Microstructure

Herbert Schroeder,Ramanathaswamy Pandian,Jun Miao
DOI: https://doi.org/10.1002/pssa.201026743
2011-01-01
Abstract:The long-known resistive switching (RS) effect in thin film metal/insulator/metal (MIM) stacks has gained tremendous interest in the last decade because of promising properties and geometries for a resistive memory device (ReRAM) indicating a strong competition for DRAM and FLASH in future ultra-high integrated circuits. In contrast to numerous contributions for the electric behaviour and many, often very detailed assumptions for the mechanisms, much less is known about the microstructure and its relation to the observed resistance changes, forming and switching. This paper reports experiments combining electric measurements with microstructure characterization in electron microscopes for both, in situ and also ex situ (i.e. sequential). The results, mainly on Pt/TiO2/Pt stacks, indicate mostly heavy damage of the thin film microstructure associated with the forming, although these damaged samples still show stable unipolar and bipolar resistive switching. These findings are discussed and compared to the scarce microstructure information in the literature which is presented in a short review at the end. From all the information it has to be concluded that much more about the microstructure changes related to resistive switching is urgently needed in order to model the RS based on data instead of assumptions. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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