Tin Doping Induced High-Performance Solution-Processed Ga2O3 Photosensor Toward Neuromorphic Visual System

Peng Li,Xuanyu Shan,Ya Lin,Xiangjing Meng,Jiangang Ma,Zhongqiang Wang,Xiaoning Zhao,Bingsheng Li,Weizhen Liu,Haiyang Xu,Yichun Liu
DOI: https://doi.org/10.1002/adfm.202303584
IF: 19
2023-01-01
Advanced Functional Materials
Abstract:Ga2O3 is an emerging wide-bandgap semiconductor with high deep ultraviolet absorption, tunable persistent photoconductivity, and excellent stability toward electric fields, making it a promising component for neuromorphic visual systems (NVSs). However, Ga2O3-based photosensors with high responsivity and long response decay times are required for efficient NVSs. A solution-processed doping strategy for fabrication of Ga2O3 is proposed with tin foil as a dopant source. Tin-doped Ga2O3 (Ga2O3:Sn) photosensors are obtained with ultrahigh responsivity and extremely long response decay times. These behaviors are attributed to substitutional tin and oxygen vacancies that modulate defect-related hole trapping. High-performance Ga2O3:Sn photosensors can mimic photonic synaptic behaviors and image pre-processing functions. NVSs based on a Ga2O3:Sn photonic synapse array perform pattern recognition with an accuracy of 97.3% under an unprecedented low-light pulse stimuli of 0.5 & mu;W cm(-2). This work provides a low-cost solution-processed approach to ultrasensitive Ga2O3:Sn NVSs and will facilitate developments in artificial intelligence technology.
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