Abstract:This article presents a retina‐inspired X‐ray optoelectronic synapse. The slow neutralization rate of VO2+ states in a‐Ga2O3 is utilized to contribute to the non‐volatile post‐synaptic current. Real‐time X‐ray image sensing, memorizing, and contrast‐enhancing functions are achieved on a 64 × 64 sensor array, effectively promoting the recognition efficiency of following artificial neutral network simulations. Machine vision techniques are widely applied for object identification in daily life and industrial production, where images are captured and processed by sensors, memories, and processing units sequentially. Neuromorphic optoelectronic synapses, as a preferable option to promote the efficiency of image recognition, are hotly pursued in non‐ionizing radiation range, but rarely in ionizing radiation including X‐rays. Here, the study proposes an X‐ray optoelectronic synapse using amorphous Ga2O3 (a‐Ga2O3) thin film. Boosted by the interfacial VO2+ defects and its slow neutralization rate, the enhanced electron tunneling process at metal/a‐Ga2O3 interface produces remarkable X‐ray‐induced post‐synaptic current, contributing to a sensitivity of 20.5, 64.3, 164.1 μC mGy−1 cm−2 for the 1st, 5th, and 10th excitation periods, respectively. Further, a 64 × 64 imaging sensor is constructed on a commercial amorphous Si (a‐Si) thin film transistor (TFT) array. The image contrast can be apparently improved under a series of X‐ray pulses due to an outstanding long‐term plasticity of the single pixel, which is beneficial to the subsequent image recognition and classification based on artificial neural network. The merits of large‐scale production ability and good compatibility with modern microelectronic techniques belonging to amorphous oxide semiconductors may promote the development of neuro‐inspired X‐ray imagers and corresponding machine vision systems.

Retina‐Inspired X‐Ray Optoelectronic Synapse Using Amorphous Ga2O3 Thin Film

Pulsed Laser Deposition of a Ga2O3 Thin Film for an Optoelectronic Synaptic Device.

Amorphous Ga2O3/GaN heterostructure for ultralow-energy-consumption optically stimulated synaptic devices

Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Photogated Synaptic Transistors Based on the Heterostructure of 4H-Sic and Organic Semiconductors for Neuromorphic Ultraviolet Vision

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Ga2O3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention.

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Visible-light stimulated synaptic plasticity in amorphous indium-gallium-zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications

Robust Self‐powered Optoelectronic Synapses Based on Epitaxial InSe/GaN Heterojunction with Interfacial Charge‐Trapping Layer

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Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

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Optically Modulated HfS2-Based Synapses for Artificial Vision Systems.