N‐doped ZnSnO Optoelectronic Synaptic Thin Film Transistors with Enhanced Visible‐light Response

Xiaohan Liu,Junyan Ren,Peixuan Hu,Yujia Qian,Ting Li,Lingyan Liang,Hongtao Cao
DOI: https://doi.org/10.1002/pssr.202300490
2024-01-28
physica status solidi (RRL) - Rapid Research Letters
Abstract:In this work, nitrogen‐doped zinc‐tin‐oxygen (ZnSnO:N) optoelectronic synaptic thin film transistors (TFTs) with superior visible light response are fabricated. Nitrogen doping narrows the bandgap of ZnSnO, which in turn broadens the absorption spectrum. Additionally, the reduction of non‐radiative centers in the channel layer prolongs the lifetime of the photogenerated electrons, resulting in enhancements to the photo response throughout the visible region. Optoelectronic synaptic devices based on ZnSnO:N TFTs can accurately replicate synaptic behaviors, including short‐term plasticity (STP) and long‐term plasticity (LTP). Furthermore, the ZnSnO:N optoelectronic synaptic TFT‐based array has the potential to improve image contrast. The ZnSnO:N TFT exhibits a considerable improvement in both visible light photosensitivity and synaptic plasticity. This article is protected by copyright. All rights reserved.
physics, condensed matter, applied,materials science, multidisciplinary
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