Abstract:Heterojunctions of perovskite quantum dots (QDs) and organic semiconductors (OSCs) can synergistically leverage the unique optoelectronic properties of different functional components to fabricate advanced optoelectronic devices, such as neuromorphic photosensors, by low-cost solution processes. However, a long-lasting challenge remains in micropatterning high-density perovskite QDs/polymer OSCs heterojunction array with high yield and reliability due to the fragility of functional layers to organic solvents. High-density and micro-structure patterned organic neuromorphic photosensor arrays based on OSCs and QDs are thus rarely reported. Here, an effective cross-linking microlithography strategy is reported to fabricate perovskite QDs/OSCs microstructure arrays. The fabricated CsPbBr3 QDs/(poly(2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl) thieno [3,2-b] thiophene) (DPPDTT) planer heterojunctions phototransistor array presents minor device-to-device variation, high density (6500 devices cm-2), and high yield (almost 100%). The device array exhibits impressive merits as a neuromorphic photosensor, including a photosensitivity of 3.02 x 107, a responsivity up to 1.92 x 104 A W-1, a detectivity exceeding 1014 Jones, and a persistent photoconductivity. Moreover, an energy consumption as low as 27.9 aJ is achieved at an operating voltage of -0.0001 V. The potential application of the heterojunction neuromorphic photosensor array in motion perception is demonstrated in conjunction with a neural network. A CsPbBr3 quantum dots/DPPDTT planer heterojunctions phototransistor array with minor device-to-device variation, high density (6500 devices cm-2), and high yield (almost 100 %) is fabricated. The phototransistor array exhibits impressive merits as a neuromorphic photosensor, including outstanding photo response performance and energy consumption as low as 27.9 aJ. The potential application of the neuromorphic photosensor array in motion perception is demonstrated. image

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