Highly Sensitive and Stable Β-Ga2o3 DUV Phototransistor with Local Back-Gate Structure and Its Neuromorphic Application

Li Xiao-Xi,Zeng Guang,Li Yu-Chun,Yu Qiu-Jun,Liu Meng-Yang,Zhu Li-Yuan,Liu Wenjun,Yang Ying-Guo,Zhang David Wei,Lu Hong-Liang
DOI: https://doi.org/10.1007/s12274-022-4574-1
IF: 9.9
2022-01-01
Nano Research
Abstract:Deep ultraviolet (DUV) phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor, military detector, oil spill detection, biological sensor, and artificial intelligence fields. In order to further improve the responsivity of UV photodetectors based on β-Ga2O3, in present work, high-performance β-Ga2O3 phototransistors with local back-gate structure were experimentally demonstrated. The phototransistor shows excellent DUV photoelectrical performance with a high responsivity of 1.01 × 107 A/W, a high external quantum efficiency of 5.02 × 109%, a sensitive detectivity of 2.98 × 1015 Jones, and a fast rise time of 0.2 s under 250 nm illumination. Besides, first-principles calculations reveal the decent stability of β-Ga2O3 nanosheet against oxidation and humidity without significant performance degradations. Additionally, the hexagonal boron nitride (h-BN)/β-Ga2O3 phototransistor can behave as a photonic synapse with ultralow power consumption of ~ 9.6 fJ per spike, which shows its potential for neuromorphic computing tasks such as facial recognition. This β-Ga2O3 phototransistor will provide a perspective for the next generation optoelectrical systems.
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