Abstract:The demand for polished silicon wafers has increased significantly in recent years to cater to the development of the semiconductor industry. For example, polished silicon wafer has direct applications in integrated circuits, radio frequency amplifiers, micro-processors, micro-electromechanical systems, etc. To carry out mechanical polishing, lapping, grinding, or single-point diamond turning of silicon, diamond abrasives were extensively used before the implementation of chemo-mechanical polishing. During the diamond-based polishing, a few problems have already been identified, such as the formation of an amorphous phase, heat-affected zones, low material removal, etc. Some research work has also reported that nano-structured abrasives lead to a thin layer of the amorphous phase and a better material removal rate. In the same direction, a molecular dynamics simulation is carried out in this paper to investigate the mechanism of material removal from monocrystalline silicon during the diamond-abrasive-based polishing process. The present work is mainly focused on the dynamics of material removal phenomena near the abrasive particles at the nanometric scale by considering stress, lattice, cohesive energy, etc. This reveals that a higher value of indentation force results in surface buckling, which creates a zone of both compressive and tensile stresses, which increases the coordination number and forms β-silicon just ahead of the abrasive particle. This mechanism happens by developing a β-silicon phase on the surface with a thickness beyond a certain value of indentation force on the zone of compression. Buckling on this phase happens due to stress localisation in compression, as the flow stress of this phase is less than that of diamond cubic lattices. To avoid the mechanism of surface buckling and process silicon material on the surface, the indentation force needs to be maintained below a critical value. In the present case, it was found that the indentation force of less than or equal to 190 nN for the abrasive size of φ8 nm does the material removal by surface processing only without surface buckling. It was also found that surface processing helps to reduce the depth of the amorphous layer significantly without compromising the material removal rate or the generation of a wavy surface. Thus, the present mechanism will help in the polishing of silicon with minimum defects and reduce processing time for the final stage of polishing towards manufacturing ultra-smooth and planer surfaces.

Surface Evolution and Stability Transition of Silicon Wafer Subjected to Nano-Diamond Grinding

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

Controllable Diamond Cutting of Structured Surfaces with Subnanometric Height Features on Silicon

An experimental investigation of silicon wafer thinning by sequentially using constant-pressure diamond grinding and fixed-abrasive chemical mechanical polishing

Molecular Dynamics Study of Nano-Grinding Behavior for Silicon Wafer Workpieces with Nanoscale Roughness Under Diamond Abrasive Rotation and Translation

Generation and distribution of residual stress during nano-grinding of monocrystalline silicon

Simulation Study of Material Deformation in Monocrystal Silicon Nano-Machining

A Microscopic Tem Study Of The Defect Layers In Cast-Mono Crystalline Silicon Wafers Induced By Diamond-Wire Sawing

Study on Subsurface Damage of Wafer Silicon Containing Through Silicon Via in Thinning

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Influence of Anisotropy on Material Removal and Deformation Mechanism Based on Nanoscratch Tests of Monocrystal Silicon

Nanoindentation and Deformation Behaviors of Silicon Covered with Amorphous SiO2: a Molecular Dynamic Study

Surface damage mechanism of monocrystalline silicon during single point diamond grinding

Mechanical Properties and Deformation Behaviors of Surface-Modified Silicon: a Molecular Dynamics Study

Characteristics of Silicon Substrates Fabricated Using Nanogrinding and Chemo-Mechanical-grinding

Mechanism of surface modification on monocrystalline silicon during diamond polishing at nanometric scale

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Nano-grinding Process of Single-Crystal Silicon Using Molecular Dynamics Simulation: Nano-grinding Parameters Effect

Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

Influence of silicon anisotropy on surface shape deviation of wafer by diamond wire saw