Abstract:The demand for polished silicon wafers has increased significantly in recent years to cater to the development of the semiconductor industry. For example, polished silicon wafer has direct applications in integrated circuits, radio frequency amplifiers, micro-processors, micro-electromechanical systems, etc. To carry out mechanical polishing, lapping, grinding, or single-point diamond turning of silicon, diamond abrasives were extensively used before the implementation of chemo-mechanical polishing. During the diamond-based polishing, a few problems have already been identified, such as the formation of an amorphous phase, heat-affected zones, low material removal, etc. Some research work has also reported that nano-structured abrasives lead to a thin layer of the amorphous phase and a better material removal rate. In the same direction, a molecular dynamics simulation is carried out in this paper to investigate the mechanism of material removal from monocrystalline silicon during the diamond-abrasive-based polishing process. The present work is mainly focused on the dynamics of material removal phenomena near the abrasive particles at the nanometric scale by considering stress, lattice, cohesive energy, etc. This reveals that a higher value of indentation force results in surface buckling, which creates a zone of both compressive and tensile stresses, which increases the coordination number and forms β-silicon just ahead of the abrasive particle. This mechanism happens by developing a β-silicon phase on the surface with a thickness beyond a certain value of indentation force on the zone of compression. Buckling on this phase happens due to stress localisation in compression, as the flow stress of this phase is less than that of diamond cubic lattices. To avoid the mechanism of surface buckling and process silicon material on the surface, the indentation force needs to be maintained below a critical value. In the present case, it was found that the indentation force of less than or equal to 190 nN for the abrasive size of φ8 nm does the material removal by surface processing only without surface buckling. It was also found that surface processing helps to reduce the depth of the amorphous layer significantly without compromising the material removal rate or the generation of a wavy surface. Thus, the present mechanism will help in the polishing of silicon with minimum defects and reduce processing time for the final stage of polishing towards manufacturing ultra-smooth and planer surfaces.

Phase Transformation of Monocrystalline Silicon Induced by Polishing With Diamond Abrasives

Surface damage mechanism of monocrystalline silicon during single point diamond grinding

Mechanism of surface modification on monocrystalline silicon during diamond polishing at nanometric scale

X-ray Diffraction Analysis of Damaged Layer During Polishing of Silicon Carbide

Effects of Anisotropy on Single Crystal Silicon in Polishing Non-Continuous Surface

The Removal Mechanism of Monocrystalline Si in the Process of Double Diamond Abrasive Polishing by Molecular Dynamics Simulation

Molecular dynamics simulation of nano-polishing of single crystal silicon on non-continuous surface

Polishing Characteristics on Silicon Wafer Using Fixed Nano-Sized Abrasive Pad

INFLUENCE OF SUB-SURFACE DAMAGE ON TEXTURING OF MONOCRYSTALLINE SILICON WAFERS FOR SOLAR CELLS

Sub-surface Damage of Ultra-Thin Monocrystalline Silicon Wafer Induced by Dry Polishing

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

An Investigation on the Monocrystalline Silicon Surface Damage Caused by Slurry Erosion

Material removal mechanism of single crystal silicon by bonnet polishing

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Surface damage and metal-catalyzed chemical etching investigation of multicrystalline silicon by diamond wire sawing

Surface Evolution and Stability Transition of Silicon Wafer Subjected to Nano-Diamond Grinding

Phase Transformations of Monocrystalline Silicon Surface under Nanoparticle Collision

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

A Study on the Surface Quality and Damage Properties of Single-Crystal Silicon Using Different Post-Treatment Processes

The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding