An X-Band Quadruple Frequency Multiplier in 65-Nm CMOS Process

Haiqiang Guo,Dongwei Pang,Shiwei Wu,Liguo Sun
DOI: https://doi.org/10.1109/csrswtc56224.2022.10098452
2022-01-01
Abstract:This paper proposes an X-band quadruple frequency multiplier using 65-nm CMOS technology. The quadruple frequency multiplier consists of two stages of doublers and one stage of the drive amplifier. The quadruple frequency multiplier achieves the conversion gain of 5 dB and the maximum output power of 6 dBm with an output signal frequency range of 8–10 GHz. Harmonic rejections are over 25 dBc in the entire bandwidth. The circuit consumes 19.2 rnA at a supply voltage of 1 V and occupies an area of $\boldsymbol{1.12 \text{mm} \times 0.44 \text{mm}}$ without pads.
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