Abstract:Artificial synapse networks capable of massively parallel computing and mimicking biological neural networks can potentially improve the processing efficiency of existing information technologies. Semiconductor devices functioning as excitatory and inhibitory synapses are crucial for developing intelligence systems, such as traffic control systems. However, achieving reconfigurability between two working modes (inhibitory and excitatory) and bilingual synaptic behavior in a single transistor remains challenging. This study successfully mimics a bilingual synaptic response using an artificial synapse based on an ambipolar floating gate memory comprising tungsten selenide (WSe2)/hexagonal boron nitride (h-BN)/ molybdenum telluride (MoTe2). In this WSe2/h-BN/MoTe2 structure, ambipolar semiconductors WSe2 and MoTe2 are inserted as channel and floating gates, respectively, and h-BN serves as the tunneling barrier layer. Using either positive or negative pulse amplitude modulations at the control gate, this device with bipolar channel conduction produced eight distinct resistance states. Based on this, we experimentally projected that we could achieve 490 memory states (210 hole-resistance states + 280 electron-resistance states). Using the bipolar charge transport and multistorage states of WSe2/h-BN/MoTe2 floating gate memory, we mimicked reconfigurable excitatory and inhibitory synaptic plasticity in a single device. Furthermore, the convolution neural network formed by these synaptic devices can recognize handwritten digits with an accuracy of >92%. This study identifies the unique properties of heterostructure devices based on two-dimensional materials as well as predicts their applicability in advanced recognition of neuromorphic computing.

High-Performance Floating Gate Heterostructure with WSe2-MoS2 Diode Channel for Neural Synapse

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

A floating‐gate‐like transistor based on InSe vdW heterostructure with high‐performance synaptic characteristics

Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs As Electronic Synapses for Neuromorphic Computing

Memory Window Ratio Enhancement of p-Type WSe 2 Memtransistors Using Dielectric GeSe 2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Memory Window Ratio Enhancement of P-Type WSe2 Memtransistors Using Dielectric GeSe2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Programmable Van‐der‐waals Heterostructure‐enabled Optoelectronic Synaptic Floating‐gate Transistors with Ultra‐low Energy Consumption

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

Artificial Synapses Based on WSe2 Homojunction via Vacancy Migration

Emulation of Optoelectronic Synaptic Behavior in a MoS2/WSe2-Based P–n Van Der Waals Heterostructure Memtransistor

A synapse with low power consumption based on MoTe 2 /SnS 2 heterostructure

High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors

A Synapse with Low Power Consumption Based on MoTe2/SnS2 Heterostructure

Band‐tailored Van Der Waals Heterostructure for Multilevel Memory and Artificial Synapse

A synapse with low power consumption based on MoTe2/SnS2heterostructure.

Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory

Electrostatic Aid-Free Photo-Floating Gate Two Dimensional MoS2 Synaptic Transistors

Exploring Neuromorphic Computing with Double-Gate Floating Device Based on Van Der Waals Heterostructures

Reconfigurable Dielectric Engineered WSe 2 /HZO Mem-transistor

Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating