Abstract:This work utilizes the interface properties of 2D MoTe2/MoS2−xOx heterostructures to successfully realize artificial synaptic functions that can be based on an optoelectronic bimodal working mechanism and solves the research difficulties of poor linearity and small tunable range. These studies provide an effective way to realize efficient neuromorphic hardware. The von Neumann bottleneck has long been a significant obstacle to the advancement of the era of intelligent computing. Neuromorphic devices are considered a promising solution to overcome this bottleneck. These devices draw inspiration from the information processing and computing capabilities of neurons in the human brain. Nevertheless, biomimetic synaptic devices used in neural network computing encounter significant challenges, including high nonlinearity in regulation, limited abundance of state conductance, and restrictions in unidirectional plasticity. Here, a memristor synaptic device is reported that utilizes the ion migration properties of MoTe2/MoS2−xOx heterojunction interface. This device demonstrates remarkable exceptional linearity, extensive dynamic regulation, and bidirectional independently controllable synaptic plasticity when subjected to bimodal regulation using electrical and optical signals. In addition, it shows significant paired‐pulse facilitation, empirical learning, and spike‐timing‐dependent properties. Furthermore, a deep learning framework is constructed to evaluate the reliability of devices in neuromorphic computation. The electronic synapses achieve high accuracy rates of 99.3% and 96.5% in recognizing digits and floral graphics, while photonic synapses achieve 95.3% and 91.5%. These findings emphasize the superior performance of photonic synapses in synaptic computation and provide a potential methodology for integrating multimodal neuromorphic hardware with artificial intelligence computing systems.

Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs As Electronic Synapses for Neuromorphic Computing

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

A Monolayer Leaky Integrate‐and‐Fire Neuron for 2D Memristive Neuromorphic Networks

2D Mos2 Neuromorphic Devices for Brain-Like Computational Systems

A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

A high linearity and energy-efficient artificial synaptic device based on scalable synthesized MoS2

2D MoTe2/MoS2−xOx Van der Waals Heterostructure for Bimodal Neuromorphic Optoelectronic Computing

Lateral heterostructures of WS2 and MoS2 monolayers for photo-synaptic transistor

Emulation of optical and electrical synaptic functions in MoS2/SnSe2 van der Waals heterojunction memtransistors

Realizing Electronic Synapses by Defect Engineering in Polycrystalline Two-Dimensional MoS2 for Neuromorphic Computing

Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation

Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating

High-performance artificial synapse based on two-dimensional MoSe2 powder with Se vacancy

Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS 2 Thin Film for Neuromorphic Application

Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor.

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing

Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS 2 Film

A synapse with low power consumption based on MoTe 2 /SnS 2 heterostructure

MoS2-based Charge-trapping Synaptic Device with Electrical and Optical Modulated Conductance