Abstract:This work utilizes the interface properties of 2D MoTe2/MoS2−xOx heterostructures to successfully realize artificial synaptic functions that can be based on an optoelectronic bimodal working mechanism and solves the research difficulties of poor linearity and small tunable range. These studies provide an effective way to realize efficient neuromorphic hardware. The von Neumann bottleneck has long been a significant obstacle to the advancement of the era of intelligent computing. Neuromorphic devices are considered a promising solution to overcome this bottleneck. These devices draw inspiration from the information processing and computing capabilities of neurons in the human brain. Nevertheless, biomimetic synaptic devices used in neural network computing encounter significant challenges, including high nonlinearity in regulation, limited abundance of state conductance, and restrictions in unidirectional plasticity. Here, a memristor synaptic device is reported that utilizes the ion migration properties of MoTe2/MoS2−xOx heterojunction interface. This device demonstrates remarkable exceptional linearity, extensive dynamic regulation, and bidirectional independently controllable synaptic plasticity when subjected to bimodal regulation using electrical and optical signals. In addition, it shows significant paired‐pulse facilitation, empirical learning, and spike‐timing‐dependent properties. Furthermore, a deep learning framework is constructed to evaluate the reliability of devices in neuromorphic computation. The electronic synapses achieve high accuracy rates of 99.3% and 96.5% in recognizing digits and floral graphics, while photonic synapses achieve 95.3% and 91.5%. These findings emphasize the superior performance of photonic synapses in synaptic computation and provide a potential methodology for integrating multimodal neuromorphic hardware with artificial intelligence computing systems.

2D Mos2 Neuromorphic Devices for Brain-Like Computational Systems

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS 2 Thin Film for Neuromorphic Application

Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating

Proton-electron-coupled MoS2 Synaptic Transistors with a Natural Renewable Biopolymer Neurotransmitter for Brain-Inspired Neuromorphic Learning

A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

All‐Solid‐State Synaptic Transistor with Ultralow Conductance for Neuromorphic Computing

A Synaptic Transistor Based on Quasi-2d Molybdenum Oxide

Dual-Gated MoS2 Neuristor for Neuromorphic Computing.

A Photoelectric-Stimulated MoS2 Transistor for Neuromorphic Engineering

A Synaptic Transistor Based on Monolayer Monocrystalline‐MoS2 for Neuromorphic Applications

Emulation of optical and electrical synaptic functions in MoS2/SnSe2 van der Waals heterojunction memtransistors

2D MoTe2/MoS2−xOx Van der Waals Heterostructure for Bimodal Neuromorphic Optoelectronic Computing

MoS2 synaptic transistor with one-step manufacture

Oxide-Based Synaptic Transistors for Neuromorphic Systems

MoS2-based Charge-trapping Synaptic Device with Electrical and Optical Modulated Conductance

Dielectric Engineered Two-Dimensional Neuromorphic Transistors

MoS2 Memristors Exhibiting Variable Switching Characteristics Toward Biorealistic Synaptic Emulation.

Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs As Electronic Synapses for Neuromorphic Computing

Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation