Abstract:The exponentially improving performance of digital computers has recently slowed due to the speed and power consumption issues resulting from the von Neumann bottleneck. In contrast, neuromorphic computing aims to circumvent these limitations by spatially co-locating logic and memory. Beyond reducing power consumption, neuromorphic devices provide efficient architectures for image recognition, machine learning, and artificial intelligence [1]. This talk will explore how two-dimensional (2D) nanoelectronic materials enable gate-tunable neuromorphic devices [2]. For example, by utilizing self-aligned, atomically thin heterojunctions, dual-gated Gaussian transistors have been realized, which show tunable anti-ambipolarity for artificial neurons, competitive learning, spiking circuits, and mixed-kernel support vector machines [3]. In addition, field-driven defect motion in polycrystalline monolayer MoS 2 enables gate-tunable memristive phenomena that serve as the basis of hybrid memristor/transistor devices (i.e., 'memtransistors' [4]) that concurrently provide logic and data storage functions [5]. The planar geometry of memtransistors further allows multiple contacts and dual gating that mimic the behavior of biological systems such as heterosynaptic responses [6]. Moreover, control over polycrystalline grain structure enhances the tunability of potentiation and depression, which enables unsupervised continuous learning in spiking neural networks [7]. Overall, this work introduces foundational circuit elements for neuromorphic computing by utilizing the unique quantum characteristics of 2D nanoelectronic materials [8]. [1] V. K. Sangwan, et al. , Nature Nanotechnology, 15 , 517 (2020). [2] M. E. Beck, et al. , ACS Nano , 14 , 6498 (2020). [3] M. E. Beck, et al. , Nature Communications , 11 , 1565 (2020). [4] V. K. Sangwan, et al. , Nature , 554 , 500 (2018). [5] X. Yan, et al. , Advanced Materials , 34 , 2108025 (2022). [6] H.-S. Lee, et al. , Advanced Functional Materials , 30 , 2003683 (2020). [7] J. Yuan, et al. , Nano Letters , 21 , 6432 (2021). [8] X. Liu, et al. , Nature Reviews Materials , 4 , 669 (2019).

Exploring Neuromorphic Computing with Double-Gate Floating Device Based on Van Der Waals Heterostructures

High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

A high-performance MoS2 synaptic device with floating gate engineering for Neuromorphic Computing

Memtransistor-like operation of devices made by graphene/h-BN/MoS2 van der Waals heterostructure

The Nonvolatile Memory and Neuromorphic Simulation of ReS2/h‐BN/Graphene Floating Gate Devices Under Photoelectrical Hybrid Modulations

(Invited) Two-Dimensional Neuromorphic Computing Materials and Devices

Dual-Gated MoS2 Neuristor for Neuromorphic Computing.

Programmable Van‐der‐waals Heterostructure‐enabled Optoelectronic Synaptic Floating‐gate Transistors with Ultra‐low Energy Consumption

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Adaptive Neural Activation and Neuromorphic Processing via Drain‐injection Threshold‐switching Float Gate Transistor Memory

A 2d Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Floating gate photo-memory devices based on van der Waals heterostructures for neuromorphic image recognition

IGZO-based floating-gate synaptic transistors for neuromorphic computing

High-Performance Floating Gate Heterostructure with WSe2-MoS2 Diode Channel for Neural Synapse

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS2-BN-Graphene Van Der Waals Heterostructures.

Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS 2 –BN–Graphene van der Waals Heterostructures