Abstract:A floating gate device (FGD) based on ReS2/h‐BN/graphene heterostructure is developed and its photoelectrical hybrid memory and neuromorphic simulation are studied. Benefiting from the outstanding photoelectrical response of ReS2, the excellent nonvolatile memory and higher recognition accuracy of artificial neural network constructed by this FGD indicate that FGD based on ReS2 channel has a great potential in sense–memory‐computation integration chips. The floating gate devices, as a kind of nonvolatile memory, obtain great application potential in logic‐in‐memory chips. The 2D materials have been greatly studied due to atomically flat surfaces, higher carrier mobility, and excellent photoelectrical response. The 2D ReS2 flake is an excellent candidate for channel materials due to thickness‐independent direct bandgap and outstanding optoelectronic response. In this paper, the floating gate devices are prepared with the ReS2/h‐BN/Gr heterojunction. It obtains superior nonvolatile electrical memory characteristics, including a higher memory window ratio (81.82%), tiny writing/erasing voltage (±8 V/2 ms), long retention (>1000 s), and stable endurance (>1000 times) as well as multiple memory states. Meanwhile, electrical writing and optical erasing are achieved by applying electrical and optical pulses, and multilevel storage can easily be achieved by regulating light pulse parameters. Finally, due to the ideal long‐time potentiation/depression synaptic weights regulated by light pulses and electrical pulses, the convolutional neural network (CNN) constructed by ReS2/h‐BN/Gr floating gate devices can achieve image recognition with an accuracy of up to 98.15% for MNIST dataset and 91.24% for Fashion‐MNIST dataset. The research work adds a powerful option for 2D materials floating gate devices to apply to logic‐in‐memory chips and neuromorphic computing.

Floating gate photo-memory devices based on van der Waals heterostructures for neuromorphic image recognition

The Nonvolatile Memory and Neuromorphic Simulation of ReS2/h‐BN/Graphene Floating Gate Devices Under Photoelectrical Hybrid Modulations

A 2d Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Band‐tailored Van Der Waals Heterostructure for Multilevel Memory and Artificial Synapse

Van Der Waals Materials-Based Floating Gate Memory for Neuromorphic Computing

AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

A High-Speed 2D Optoelectronic In-Memory Computing Device with 6-Bit Storage and Pattern Recognition Capabilities

High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors

2D materials-based photo-memristors with tunable non-volatile responsivities for neuromorphic vision processing

Photoinduced Multi-Bit Nonvolatile Memory Based on a Van Der Waals Heterostructure with a 2D-Perovskite Floating Gate.

Hardware Implementation of Photoelectrically Modulated Dendritic Arithmetic and Spike-Timing-dependent Plasticity Enabled by an Ion-Coupling Gate-Tunable Vertical 0D-Perovskite/2d-mos2hybrid-dimensional Van Der Waals Heterostructure

Reconfigurable Optoelectronic Memristor for In-Sensor Computing Applications

Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

Neuromorphic Computing Using a Floating Gate Modulated Photoelectric Synaptic Transistor

Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Two-dimensional Ferroelectric Semiconductor Floating-Gate Transistor with Light-Tunable Field Effect for Memory and Photo-Synapse

Optoelectronic Neuromorphic Logic Memory Device Based on Ga2O3/MoS2 Van Der Waals Heterostructure with High Rectification and On/Off Ratios

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures