2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

Lei Tong,Zhuiri Peng,Runfeng Lin,Zheng Li,Yilun Wang,Xinyu Huang,Kan-Hao Xue,Hangyu Xu,Feng Liu,Hui Xia,Peng Wang,Mingsheng Xu,Wei Xiong,Weida Hu,Jianbin Xu,Xinliang Zhang,Lei Ye,Xiangshui Miao

DOI: https://doi.org/10.1126/science.abg3161

IF: 56.9

2021-09-17

Science

Abstract:Memory and logic in the same device Future artificial intelligence applications and data-intensive computations require the development of neuromorphic systems beyond traditional heterogeneous device architectures. Physical separation between a peripheral signal-processing unit and a memory-operating unit is one of the main bottlenecks of heterogeneous architectures, blocking further improvements in efficient resistance matching, energy consumption, and integration compatibility. Tong et al . present a transistor-memory architecture based on a homogeneous tungsten selenide-on-lithium niobate device array (see the Perspective by Rao and Tao). Analog peripheral signal preprocessing and nonvolatile memory were possible within the same device structure, promising diverse neuromorphic functionalities and offering potential improvements in neuromorphic systems on-chip. —YS

multidisciplinary sciences

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a uniform transistor - memory architecture based on two - dimensional materials (2D materials) for neuromorphic hardware. Specifically, the research aims to achieve this goal through the following aspects: 1. **Develop new device structures**: Combine two - dimensional materials (such as WSe₂) with ferroelectric materials (such as LiNbO₃, LNO) to design transistors and memory cells with high performance and stability. 2. **Improve performance and integration**: Optimize device design to reduce the impact of defects on performance, and explore the use of other ferroelectric materials (such as HfO₂) to further improve the integration density and performance of the device. 3. **Achieve multi - functionality**: In addition to analog signal processing (ASP) and memory operations (MO), it also explores how to implement advanced applications such as digital logic functions, multi - level logic systems, and mixed - signal neural networks in this architecture. 4. **Reduce energy consumption**: Through non - volatile doping technology, maintain the device state without applying a gate voltage, thereby reducing energy consumption. 5. **Construct 3D integrated systems**: Propose a design concept from 2D integration to 3D stacking to achieve more complex neuromorphic chips and solve the challenges in large - scale production, such as the growth of high - quality two - dimensional materials at the wafer level. 6. **Expand application scenarios**: It is not limited to static memory functions, and also studies the short - term memory characteristics induced by light pulses, providing more possibilities for future artificial vision systems and other neuromorphic computing tasks. In summary, the core objective of this paper is to create an efficient, multi - functional, and low - power neuromorphic hardware platform to support the development of next - generation artificial intelligence and computing technologies.

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

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