Homogeneous neuromorphic hardware

Feng Rao,Xutang Tao

DOI: https://doi.org/10.1126/science.abl4110

IF: 56.9

2021-09-17

Science

Abstract:Bifunctional ferroelectric transistors enable collocation of memory and processing

multidisciplinary sciences

What problem does this paper attempt to address?

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Fan Xia,Tian Xia,Li Xiang,Sujuan Ding,Shuo Li,Yucheng Yin,Meiqi Xi,Chuanhong Jin,Xuelei Liang,Youfan Hu

DOI: https://doi.org/10.1021/acsami.2c07825

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:Biological nervous systems evolved in nature have marvelous information processing capacities, which have great reference value for modern information technologies. To expand the function of electronic devices with applications in smart health monitoring and treatment, wearable energy-efficient computing, neuroprosthetics, etc., flexible artificial synapses for neuromorphic computing will play a crucial role. Here, carbon nanotube-based ferroelectric synaptic transistors are realized on ultrathin flexible substrates via a low-temperature approach not exceeding 90 degrees C to grow ferroelectric dielectrics in which the single-pulse, pairedpulse, and repetitive-pulse responses testify to well-mimicked plasticity in artificial synapses. The long-term potentiation and long-term depression processes in the device demonstrate a dynamic range as large as 2000x, and 360 distinguishable conductance states are achieved with a weight increase/decrease nonlinearity of no more than 1 by applying stepped identical pulses. The stability of the device is verified by the almost unchanged performance after the device is kept in ambient conditions without additional passivation for 240 days. An artificial neural network-based simulation is conducted to benchmark the hardware performance of the neuromorphic devices in which a pattern recognition accuracy of 95.24% is achieved.
Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Qingrong Huang,Dayane Reis,Chao Li,Di Gao,Michael Niemier,Xiaobo Sharon Hu,Mohsen Imani,Xunzhao Yin,Cheng Zhuo

DOI: https://doi.org/10.1109/MDAT.2021.3063336

2022-01-01

Abstract:The article presents computing-in-memory designs using ferroelectric field-effect transistors. Thanks to good support for various key logic operations, these designs can be used for multiple learning tasks/paradigms, from classical machine learning to hyperdimensional computing, and achieve both compactness and efficiency.
2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

Lei Tong,Zhuiri Peng,Runfeng Lin,Zheng Li,Yilun Wang,Xinyu Huang,Kan-Hao Xue,Hangyu Xu,Feng Liu,Hui Xia,Peng Wang,Mingsheng Xu,Wei Xiong,Weida Hu,Jianbin Xu,Xinliang Zhang,Lei Ye,Xiangshui Miao

DOI: https://doi.org/10.1126/science.abg3161

IF: 56.9

2021-09-17

Science

Abstract:Memory and logic in the same device Future artificial intelligence applications and data-intensive computations require the development of neuromorphic systems beyond traditional heterogeneous device architectures. Physical separation between a peripheral signal-processing unit and a memory-operating unit is one of the main bottlenecks of heterogeneous architectures, blocking further improvements in efficient resistance matching, energy consumption, and integration compatibility. Tong et al . present a transistor-memory architecture based on a homogeneous tungsten selenide-on-lithium niobate device array (see the Perspective by Rao and Tao). Analog peripheral signal preprocessing and nonvolatile memory were possible within the same device structure, promising diverse neuromorphic functionalities and offering potential improvements in neuromorphic systems on-chip. —YS

multidisciplinary sciences
Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Shuiyuan Wang,Lan Liu,Lurong Gan,Huawei Chen,Xiang Hou,Yi Ding,Shunli Ma,David Wei Zhang,Peng Zhou

DOI: https://doi.org/10.1038/s41467-020-20257-2

IF: 16.6

2021-01-04

Nature Communications

Abstract:Abstract With the advent of the big data era, applications are more data-centric and energy efficiency issues caused by frequent data interactions, due to the physical separation of memory and computing, will become increasingly severe. Emerging technologies have been proposed to perform analog computing with memory to address the dilemma. Ferroelectric memory has become a promising technology due to field-driven fast switching and non-destructive readout, but endurance and miniaturization are limited. Here, we demonstrate the α-In 2 Se 3 ferroelectric semiconductor channel device that integrates non-volatile memory and neural computation functions. Remarkable performance includes ultra-fast write speed of 40 ns, improved endurance through the internal electric field, flexible adjustment of neural plasticity, ultra-low energy consumption of 234/40 fJ per event for excitation/inhibition, and thermally modulated 94.74% high-precision iris recognition classification simulation. This prototypical demonstration lays the foundation for an integrated memory computing system with high density and energy efficiency.

multidisciplinary sciences
Ferroelectric materials for neuroinspired computing applications

Dong Wang,Shenglan Hao,Brahim Dkhil,Bobo Tian,Chungang Duan

DOI: https://doi.org/10.1016/j.fmre.2023.04.013

2023-05-19

Abstract:In recent years, the emergence of numerous applications of artificial intelligence (AI) has sparked a new technological revolution. These applications include facial recognition, autonomous driving, intelligent robotics, and image restoration. However, the data processing and storage procedures in the conventional von Neumann architecture are discrete, which leads to the "memory wall" problem. As a result, such architecture is incompatible with AI requirements for efficient and sustainable processing. Exploring new computing architectures and material bases is therefore imperative. Inspired by neurobiological systems, in-memory and in-sensor computing techniques provide a new means of overcoming the limitations inherent in the von Neumann architecture. The basis of neural morphological computation is a crossbar array of high-density, high-efficiency non-volatile memory devices. Among the numerous candidate memory devices, ferroelectric memory devices with non-volatile polarization states, low power consumption and strong endurance are expected to be ideal candidates for neuromorphic computing. Further research on the complementary metal-oxide-semiconductor (CMOS) compatibility for these devices is underway and has yielded favorable results. Herein, we first introduce the development of ferroelectric materials as well as their mechanisms of polarization reversal and detail the applications of ferroelectric synaptic devices in artificial neural networks. Subsequently, we introduce the latest developments in ferroelectrics-based in-memory and in-sensor computing. Finally, we review recent works on hafnium-based ferroelectric memory devices with CMOS process compatibility and give a perspective for future developments.
Multimodal 2D Ferroelectric Transistor with Integrated Perception-and-Computing-in-Memory Functions for Reservoir Computing

Jiachao Zhou,Anzhe Chen,Yishu Zhang,Xinwei Zhang,Jian Chai,Jiayang Hu,Hanxi Li,Yang Xu,Xulang Liu,Ning Tan,Fei Xue,Bin Yu

DOI: https://doi.org/10.1021/acs.nanolett.4c05071

IF: 10.8

2024-11-14

Nano Letters

Abstract:Emerging neuromorphic hardware promises energy-efficient computing by colocating multiple essential functions at the individual component level. The implementation is challenging due to mismatch between the characteristics of multifunctional devices and neural networks. Here, we demonstrate an artificial synapse based on a 2D α-phase indium selenide that exhibits integrated perception-and-computing-in-memory functions in a single-transistor setup, serving as a basic building block for reservoir...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Mattia Halter,Laura Bégon-Lours,Valeria Bragaglia,Marilyne Sousa,Bert Jan Offrein,Stefan Abel,Mathieu Luisier,Jean Fompeyriney

DOI: https://doi.org/10.48550/arXiv.2001.06475

2020-01-17

Emerging Technologies

Abstract:Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing units as in standard von Neuman architectures for data-critical applications including machine learning. The essential building blocks of neuromorphic systems are non-volatile synaptic elements such as memristors. Key memristor properties include a suitable non-volatile resistance range, continuous linear resistance modulation and symmetric switching. In this work, we demonstrate voltage-controlled, symmetric and analog potentiation and depression of a ferroelectric Hf$_{57}$Zr$_{43}$O$_{2}$ (HZO) field effect transistor (FeFET) with good linearity. Our FeFET operates with a low writing energy (fJ) and fast programming time (40 ns). Retention measurements have been done over 4-bits depth with low noise (1%) in the tungsten oxide (WO$_{x}$) read out channel. By adjusting the channel thickness from 15nm to 8nm, the on/off ratio of the FeFET can be engineered from 1% to 200% with an on-resistance ideally >100 kOhm, depending on the channel geometry. The device concept is using earth-abundant materials, and is compatible with a back end of line (BEOL) integration into complementary metal-oxidesemiconductor (CMOS) processes. It has therefore a great potential for the fabrication of high density, large-scale integrated arrays of artificial analog synapses.
Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Gaokuo Zhong,Mengfei Zi,Chuanlai Ren,Qun Xiao,Mingkai Tang,Liyu Wei,Feng An,Shuhong Xie,Jinbin Wang,Xiangli Zhong,Mingqiang Huang,Jiangyu Li

DOI: https://doi.org/10.1063/5.0013638

IF: 4

2020-08-31

Applied Physics Letters

Abstract:Neuromorphic computing has the potential to accelerate high performance parallel and low power in-memory computation, artificial intelligence, and adaptive learning. Despite emulating the basic functions of biological synapses well, the existing artificial electronic synaptic devices have yet to match the softness, robustness, and ultralow power consumption of the brain. Here, we demonstrate an all-inorganic flexible artificial synapse enabled by a ferroelectric field effect transistor based on mica. The device not only exhibits excellent electrical pulse modulated conductance updating for synaptic functions but also shows remarkable mechanical flexibility and high temperature reliability, making robust neuromorphic computation possible under external disturbances such as stress and heating. Based on its linear, repeatable, and stable long-term plasticity, we simulate an artificial neural network for the Modified National Institute of Standards and Technology handwritten digit recognition with an accuracy of 94.4%. This work provides a promising way to enable flexible, low-power, robust, and highly efficient neuromorphic computation that mimics the brain.

physics, applied
Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Zheng-Dong Luo,Siqing Zhang,Yan Liu,Dawei Zhang,Xuetao Gan,Jan Seidel,Yang Liu,Genquan Han,Marin Alexe,Yue Hao

DOI: https://doi.org/10.1021/acsnano.2c00079

IF: 17.1

2022-02-11

ACS Nano

Abstract:In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce the energy and time consumption for data-intensive computation. With the increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory computing hardware would require a different platform to deliver significantly enhanced functionalities at the material and device level. Here, we explore a dual-gate two-dimensional ferroelectric field-effect transistor (2D FeFET) as a basic device to form both nonvolatile logic gates and artificial synapses, addressing in-memory computing simultaneously in digital and analog spaces. Through diversifying the electrostatic behaviors in 2D transistors with the dual-ferroelectric-coupling effect, rich logic functionalities including linear (AND, OR) and nonlinear (XNOR) gates were obtained in unipolar (MoS<sub>2</sub>) and ambipolar (MoTe<sub>2</sub>) FeFETs. Combining both types of 2D FeFETs in a heterogeneous platform, an important computation circuit, i.e., a half-adder, was successfully constructed with an area-efficient two-transistor structure. Furthermore, with the same device structure, several key synaptic functions are shown at the device level, and an artificial neural network is simulated at the system level, manifesting its potential for neuromorphic computing. These findings highlight the prospects of dual-gate 2D FeFETs for the development of multifunctional in-memory computing hardware capable of both digital and analog computation.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Ferroelectric memristor and its neuromorphic computing applications

Junmei Du,Bai Sun,Chuan Yang,Zelin Cao,Guangdong Zhou,Hongyan Wang,Yuanzheng Chen

DOI: https://doi.org/10.1016/j.mtphys.2024.101607

IF: 11.021

2024-12-04

Materials Today Physics

Abstract:Ferroelectric memristors, characterized by spontaneous polarization ferroelectric materials as a functional layer of memristor, yields unique ferroelectric resistive switching behaviours under a reversal electric field. This device demonstrates notable capability in the stable and precise emulation of synaptic and neuronal functions, analogous to those in the human brain, offering an attractive option for neuromorphic computing. With the development of nanotechnology and nano-ferroelectric materials, the advent of nano-ferroelectric memristors enables their incorporation into dense crossbar arrays, enhancing the density and efficiency of neuromorphic computing. In this review, we offer a comprehensive overview of ferroelectric memristor and its neuromorphic computing applications, including the recent progress, existing challenges and possible solutions, as well as future development direction.

materials science, multidisciplinary,physics, applied
Reconfigurable Ag/HfO 2 /NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Jiaqi Chen,Xingqiang Liu,Chang Liu,Lin Tang,Tong Bu,Bei Jiang,Yahui Qing,Yulu Xie,Yong Wang,Yongtao Shan,Ruxin Li,Cong Ye,Lei Liao

DOI: https://doi.org/10.1021/acs.nanolett.4c01319

IF: 10.8

2024-04-24

Nano Letters

Abstract:Artificial synapses and bionic neurons offer great potential in highly efficient computing paradigms. However, complex requirements for specific electronic devices in neuromorphic computing have made memristors face the challenge of process simplification and universality. Herein, reconfigurable Ag/HfO(2)/NiO/Pt memristors are designed for feasible switching between volatile and nonvolatile modes by compliance current controlled Ag filaments, which enables stable and reconfigurable synaptic and...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ferroelectric Devices for Neuromorphic Computing

Qing-Tai Zhao,Fengben Xi,Yi Han,Andreas Grenmyr,Jin Hee Bae,Detlev Gruetzmacher

DOI: https://doi.org/10.1149/ma2022-02321183mtgabs

2022-11-24

ECS Meeting Abstracts

Abstract:Neuromorphic computing inspired by the neural network systems of the human brain enables energy efficient computing for big-data processing. A neural network is formed by thousands or even millions of neurons which are connected by even a higher number of synapses. Neurons communicate with each other through the connected synapses. The main responsibility of synapses is to transfer information from the pre-synaptic to the postsynaptic neurons. Synapses can memorize and process the information simultaneously. The plasticity of a synapse to strengthen or weaken their activity over time make it capable of learning and computing. Thus, artificial synapses which can emulate functionalities and the plasticity of bio-synapses form the backbones of neuromorphic computing. Alternative artificial synapses have been successfully demonstrated. The classical two-terminal memristor devices, like resistive random access memory (ReRAM), phase change memory (PCM) and ferroelectric tunnel junctions (FTJs) with one terminal connected to the pre-synaptic neuron and another connected with the post-synaptic neuron, own advantages of simple structure, easy processing with high density, and capability of integration with CMOS. However, signal processing and learning cannot be performed simultaneously in 2-terminal devices, thus limiting their synaptic functionalities. Ferroelectric field effect transistors (FeFET) which uses ferroelectric as the gate oxide are the most interesting three-terminal artificial synapse devices, in which the gate or the source is connected to the pre-synaptic neuron while the drain is used for the terminal of the post-synaptic neuron , thus can perform signal transmission and learning simultaneously. However, traps at the channel interface can degrade the device performance causing low endurance. Focuses of those abovementioned devices have been mainly put on the homosynaptic plasticity, which is input specific, meaning that the plasticity occurs only at the synapse with a pre-synaptic activation . The homosynaptic plasticity has a drawback of positive feedback loop: when a synapse is potentiated, the probability of the synapse to be further potentiated is increased. Similarly, when a synapse is depressed the probability of the synapse of being further depressed is higher. Therefore, synaptic weights tend to be either strengthened to the maximum value or weakened to zero, causing the system to be unstable. In contrast, heterosynaptic plasticity can be induced at any synapse at the same time after episodes of strong postsynaptic activity, avoiding the positive feedback problem and stabilize the activity of the post-synaptic neuron. To address the above challenges we proposed a very simple 4-terminal synapse structure based on gated Schottky diodes on silicon (FEMOD) with a ferroelectric layer. The conductance of the Schottky diode is modulated by the polarization of the ferroelectric layer. With this simple synapse structure we can achieve multiple hetero-synaptic functions, including excitatory/ inhibitory post-synaptic current (EPSC/IPSC), paired-pulse facilitation/depression (PPF/PPD), long-term potentiation/depression (LTP/LTD), as well as biological neuron-like spike-timing-dependent plasticity (STDP) characteristics. The modulatory synapse can modify the weight of another synapse with a very low voltage. Furthermore, logic gates, like AND and NAND which are highly desired for in-memory computing can be realized with such simple structure. Figure 1
Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Jiaqi Chen,Xingqiang Liu,Chang Liu,Lin Tang,Tong Bu,Bei Jiang,Yahui Qing,Yulu Xie,Yong Wang,Yongtao Shan,Ruxin Li,Cong Ye,Lei Liao

DOI: https://doi.org/10.1021/acs.nanolett.4c01319

IF: 10.8

2024-01-01

Nano Letters

Abstract:Artificial synapses and bionic neurons offer great potential in highly efficient computing paradigms. However, complex requirements for specific electronic devices in neuromorphic computing have made memristors face the challenge of process simplification and universality. Herein, reconfigurable Ag/HfO2/NiO/Pt memristors are designed for feasible switching between volatile and nonvolatile modes by compliance current controlled Ag filaments, which enables stable and reconfigurable synaptic and neuronal functions. A neuromorphic computing system effectively replicates the biological synaptic weight alteration and continuously accomplishes excitation and reset of artificial neurons, which consist of bionic synapses and artificial neurons based on isotype Ag/HfO2/NiO/Pt memristors. This reconfigurable electrical performance of the Ag/HfO2/NiO/Pt memristors takes advantage of simplified hardware design and delivers integrated circuits with high density, which exhibits great potency for future neural networks.
Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Bowen Shen,Haoran Sun,Xianyu Hu,Jie Sun,Jun Jiang,Zengxing Zhang,Anquan Jiang

DOI: https://doi.org/10.1002/adfm.202315954

IF: 19

2024-01-01

Advanced Functional Materials

Abstract:Low-power and parallel processing Neuromorphic computing that imitates on the human brain's extraordinary data processing and learning capabilities is promising in non-von Neumann application platforms in the post-Moore era. Ferroelectric domain walls appearing as nanoscale topological defects in solids exhibit coexisting ordering parameters besides the spontaneous polarization, leading to the emergence of rich physics and electronic effects in the development of neuromorphic electronics that go beyond the conventional CMOS. In this study, the four-state domain wall memory is developed on LiNbO3 ferroelectric thin films integrated with Si substrates, where each state can be stably manipulated at a specific low voltage, showcasing outstanding fatigue resistance and retention performance. The constructed crossbar array that functions as a kernel for image convolution can be used to implement processing operations like image filtering, sharpness enhancement, and edge detection. Additional simulation from a convolutional neural network model shows 96.98% accuracy on the Modified National Institute of Standards and Technology handwritten digits dataset. The stable multi-state domain wall memory provides a new approach for computing and promotes research in domain wall electronics to meet future enormous demands of big data.
Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing

Dong-Liang Li,Wen-Min Zhong,Xin-Gui Tang,Qin-yu He,Yan-Ping Jiang,Qiu-Xiang Liu

DOI: https://doi.org/10.1063/5.0205429

IF: 4

2024-06-17

Applied Physics Letters

Abstract:Multiferroic materials have important research significance in the fields of magnetic random-access memory, ferroelectric random-access memory, resistive random-access memory, and neuromorphic computing devices due to their excellent and diverse physical properties. In this work, a solution of Bi2FeMnO6 was prepared using a solution-based method, and an Au/Bi2FeMnO6/TiO2 heterostructure device was fabricated on a Si substrate. X-ray diffraction and transmission electron microscopy data indicate that the Bi2FeMnO6 films have hexagonal R3c symmetry structures. The Bi2FeMnO6 film exhibits ferroelectricity with a fine remanent polarization. In addition, the Bi2FeMnO6-based devices have excellent switching ratios of 6.37 × 105. A larger switching ratio can provide a multi-resistance state for the device, which is beneficial for the simulation of synapses. Hence, it effectively emulates excitatory postsynaptic currents, paired-pulse facilitation, and long-term plasticity of synapses and achieves recognition accuracy of 95% in neuromorphic computing. We report a promising material for the development of various nonvolatile memories and neuromorphic synaptic devices.

physics, applied
Low-Power and High-Speed HfLaO-based FE-TFTs for Artificial Synapse and Reconfigurable Logic Applications

Yongkai Liu,Tian-Yu Wang,Kangli Xu,Zhenhai Li,Jiajie Yu,Jialin Meng,Hao Zhu,Qing-Qing Sun,David Wei Zhang,Lin Chen

DOI: https://doi.org/10.1039/d3mh01461d

IF: 13.3

2023-11-08

Materials Horizons

Abstract:Emulating the human nervous system to build next-generation computing architectures is considered a promising way to solve the von Neumann bottleneck. Transistors based on ferroelectric layers are strong contenders for the basic unit of artificial neural systems due to the advantages of high speed and low power consumption. In this work, the potential of Fe-TFTs integrating the HfLaO ferroelectric film and ultra-thin ITO channel for artificial synaptic devices is demonstrated for the first time. The Fe-TFTs can respond significantly to pulses as low as 14 ns with an energy consumption of 93.1 aJ, which is at the leading level for similar devices. In addition, Fe-TFTs exhibit essential synaptic functions and achieve a recognition rate of 93.2% for handwritten digits. Notably, a novel reconfigurable approach involving the combination of two types of electrical pulses to realize Boolean logic operations ("AND", "OR") within a single Fe-TFT has been introduced for the first time. The simulations of array-level operations further demonstrated the potential for parallel computing. This multifunctional Fe-TFTs reveal new hardware options for neuromorphic computing chips.

materials science, multidisciplinary,chemistry
Self‐Rectifying Switching Memory Based on HfOx/FeOx Semiconductor Heterostructure for Neuromorphic Computing

Haofeng Ran,Zhijun Ren,Jie Li,Bai Sun,Tongyu Wang,Dengshun Gu,Wenhua Wang,Xiaofang Hu,Zhekang Dong,Qunliang Song,Lidan Wang,Shukai Duan,Guangdong Zhou

DOI: https://doi.org/10.1002/adfm.202418113

IF: 19

2024-12-07

Advanced Functional Materials

Abstract:The HfOx/FeOx semiconductor heterojunction self‐rectifying‐RRAM with a robust self‐rectifying switching behavior featured by an average rectifying ratio (≈104), high resistance ratio (>106), high cycling endurance (>104 cycles), high computing precision (>6 bits) and high performance synaptic plasticity is developed for neuromorphic computing. A comprehensive study involving HR‐TEM in situ observation and band model is carried out for this self‐rectifying‐RRAM, showing a great potential in large scale array integration. Sneak‐path current is one of the biggest barriers for large‐scale passive memristor array integration. An ideal self‐rectifying resistance random access memory (SR‐RRAM) is a desirable solution but it has not been demonstrated today for optimizing comprehensive indexes for neuromorphic computing. The HfOx/FeOx semiconductor heterojunction SR‐RRAM with a robust self‐rectifying switching behavior featured by an average rectifying ratio (≈104), high resistance ratio (>106), high cycling endurance (>104 cycles), high computing precision (>6 bits) and synaptic plasticity such as paired‐pulse facilitation (PPF) and the spike‐timing‐dependent plasticity (STDP) for artificial intelligence recognition is developed using the unidirectional conductivity feature of p‐n junction. The electron hopping, tunneling, and blocking in this semiconductor heterojunction that is verified by the energy band mode based on UV photoelectron spectroscopy (UPS) technology and low‐energy inverse photoelectron spectroscopy (LEIPS) and in situ high resolution transmission electron microscopy (HR‐TEM) observation plays a dominant role in the self‐rectifying analog switching behaviors. This work provides energy‐band engineering for the large‐scale memristor array integration, representing a significant advancement in hardware for neuromorphic computing.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Integration of Neuromorphic and Reconfigurable Logic-in-Memory Operations in an Electrolyte-Manipulated Ferroelectric Organic Neuristor.

Longfei Li,Qijing Wang,Mengjiao Pei,Hengyuan Wang,Jianhang Guo,Ziqian Hao,Yating Li,Qinyong Dai,Kuakua Lu,Yun Li

DOI: https://doi.org/10.1002/aisy.202200434

IF: 7.298

2023-01-01

Advanced Intelligent Systems

Abstract:The rapid development of digital technology results in a tremendous increase in computational tasks that impose stringent performance requirements on next-generation computing. Biological neurons with fault tolerance and logic functions exhibit powerful computing capacity when facing complex real-world problems, which strikes the inspiration for the development of highly energy-efficient brain-like computing. Herein, a novel device architecture, an electrolyte-manipulated ferroelectric organic neuristor, which emulates biological neurons to perform both neuromorphic and reconfigurable logic-in-memory operations in a single cell, is proposed. The interfacial coupling of ions and dipoles in the neuristor contributes to the tunable synaptic behaviors of short- to long-term plasticity. Notably, by virtue of lateral capacitive coupling, the neuristor is effectively controlled by multiple in-plane gates to achieve heterosynaptic plasticity. An artificial neural network exhibits robust recognition ability with high accuracy of 93.7% in speech recognition, further demonstrating the feasibility of the neuristor for neuromorphic computing. Additionally, reconfigurable logic-in-memory operations (OR and AND) are successfully demonstrated in a single device. Therefore, the devices shed new light on the development of more brain-inspired computing systems in the era of big data.
Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing

Ding Wang,Ping Wang,Shubham Mondal,Mingtao Hu,Yuanpeng Wu,Tao Ma,Zetian Mi

DOI: https://doi.org/10.1002/adma.202210628

IF: 29.4

2023-03-11

Advanced Materials

Abstract:Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can potentially alleviate the energy constraints and complexity/footprint challenges imposed by digital von Neumann systems. Yet the current ferroelectric resistive memories suffer from either low ON/OFF ratios/imprint or limited compatibility with mainstream semiconductors. Here we demonstrate, for the first time, ferroelectric and analog resistive switching in an epitaxial nitride heterojunction comprising ultrathin (∼5 nm) nitride ferroelectrics, i.e., ScAlN, with potentiality to bridge the gap between performance and compatibility. High ON/OFF ratios (up to 105), high uniformity, good retention ( 105 s) and cycling endurance (>104) are simultaneously demonstrated in a metal/oxide/nitride ferroelectric junction. We further demonstrate that the memristor can provide programmability to enable multistate operation and linear analogue computing as well as image processing with high accuracy. Neural network simulations based on the weight update characteristics of the nitride memory yielded an image recognition accuracy of 92.9% (baseline 96.2%) on the images from Modified National Institute of Standards and Technology. The non‐volatile multi‐level programmability and analog computing capability provide first‐hand and landmark evidence for constructing advanced memory/computing architectures based on emerging nitride ferroelectrics, and promote homo and hybrid integrated functional edge devices beyond silicon. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures

Sayani Majumdar

DOI: https://doi.org/10.3389/fnano.2024.1371386

2024-05-15

Frontiers in Nanotechnology

Abstract:The future computing beyond von Neumann era relies heavily on emerging devices that can extensively harness material and device physics to bring novel functionalities and can perform power-efficient and real time computing for artificial intelligence (AI) tasks. Additionally, brain-like computing demands large scale integration of synapses and neurons in practical circuits that requires the nanotechnology to support this hardware development, and all these should come at an affordable process complexity and cost to bring the solutions close to market rather soon. For bringing AI closer to quantum computing and space technologies, additional requirements are operation at cryogenic temperatures and radiation hardening. Considering all these requirements, nanoelectronic devices utilizing ferroic ordering has emerged as one promising alternative. The current review discusses the basic architectures of spintronic and ferroelectric devices for their integration in neuromorphic and analog memory applications, ferromagnetic and ferroelectric domain structures and control of their dynamics for reliable multibit memory operation, synaptic and neuronal leaky-integrate-and-fire (LIF) functions, concluding with their large-scale integration possibilities, challenges and future research directions.

Homogeneous neuromorphic hardware

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Ferroelectric materials for neuroinspired computing applications

Multimodal 2D Ferroelectric Transistor with Integrated Perception-and-Computing-in-Memory Functions for Reservoir Computing

A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Ferroelectric memristor and its neuromorphic computing applications

Reconfigurable Ag/HfO 2 /NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Ferroelectric Devices for Neuromorphic Computing

Reconfigurable Ag/HfO2/NiO/Pt Memristors with Stable Synchronous Synaptic and Neuronal Functions for Renewable Homogeneous Neuromorphic Computing System

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing

Low-Power and High-Speed HfLaO-based FE-TFTs for Artificial Synapse and Reconfigurable Logic Applications

Self‐Rectifying Switching Memory Based on HfOx/FeOx Semiconductor Heterostructure for Neuromorphic Computing

Integration of Neuromorphic and Reconfigurable Logic-in-Memory Operations in an Electrolyte-Manipulated Ferroelectric Organic Neuristor.

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing

Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures