Abstract:High sensitivity to crack and damage of chemical vapor-deposited silicon carbide (CVD- SiC) restricts the high-efficiency and low-damage manufacturing of CVD-SiC components. This paper aims to reveal the damage and material removal mechanisms of CVD-SiC after being scratched by diamond abrasives. The mechanical properties, scratching force, depth of ductile-brittle transition, residual depth and material removal damages of the CVD-SiC were discussed by the indentation, nano-scratching experiments, and compared with sintered silicon carbide (SSiC) ceramics. The results demonstrated that the mechanical properties of CVD-SiC are better than SSiC. In terms of hardness and fracture toughness, CVD-SiC demonstrates a 10– 20% and 20– 30% higher level of performance than SSiC, respectively. SSiC exhibits a brittleness level approximately 30% higher than that of CVD-SiC. SSiC ceramics are prone to crack deflection, intergranular fracture and transgranular fracture during indentation, indicating a higher propensity for brittle fracture in SSiC. The crack propagation in CVD-SiC is relatively regular. Both materials undergo the ductile, ductile-brittle transition and brittle stage, and the fluctuation variability of CVD-SiC material is notably lower than that of SSiC during the brittle stage. Compared with SSiC, the residual depth, groove width and transverse force of CVD-SiC are smaller under the same normal load. The critical depth of ductile-brittle transition of CVD-SiC is about 2 times that of SSiC in experimental and theoretical, indicating that CVD-SiC easily achieves ductile grinding. The mechanical properties, crack system and crystal structure of the CVD-SiC and SSiC materials cause the divergences in brittle removal. The radial-median crack system dominates the material removal of CVD-SiC. The disparity of deformations on the inside and outside of the crystal in the brittle stage leads to significant fluctuation variability of force and depth of SSiC during the scratching.

EHTT2022-Material removal characteristics of single crystal 4H-SiC based on varied-load nanoscratch tests

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