Abstract:Large-scale ab initio simulation methods have been employed to investigate the configurations and properties of defects in SiC. Atomic structures, formation energies and binding energies of small vacancy clusters have also been studied as a function of cluster size, and their relative stabilities are determined. The calculated formation energies of point defects are in good agreement with previously theoretical calculations. The results show that the di-vacancy cluster consists of two C vacancies located at the second nearest neighbor sites is stable up to 1300K, while a di-vacancy with two Si vacancies is not stable and may dissociate at room temperature. In general, the formation energies of small vacancy clusters increase with size, but the formation energies for clusters with a Si vacancy and nC vacancies (VSi–nVC) are much smaller than those with a C vacancy and nSi vacancies (VC–nVSi). These results demonstrate that the VSi–nVC clusters are more stable than the VC–nVSi clusters in SiC, and provide possible nucleation sites for larger vacancy clusters or voids to grow. For these small vacancy clusters, the binding energy decreases with increasing cluster size, and ranges from 2.5 to 4.6eV. These results indicate that the small vacancy clusters in SiC are stable at temperatures up to 1900K, which is consistent with experimental observations.

Dimer-vacancy–dimer-vacancy Interaction on the Si(001) Surface: the Nature of the 2×Nstructure

Missing dimer vacancies ordering on the Si(100) surface

Comparative study of dimer vacancies and dimer-vacancy lines on Si(001) and Ge(001)

Observation of Local Electronic Structures of Adatom Vacancies Insi(111)−(7×7)surface in Real Space

Adatom Vacancies on the Si(111)-(7×7) Surface

Observation Of Local Electronic Structures Of Adatom Vacancies In Si(111)-(7x7) Surface In Real Space

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Precursor Mechanism for Interaction of Bulk Interstitial Atoms with Si(100)

Dimer-Flipping-Assisted Diffusion on A Si(001) Surface

Molecular Dynamics Simulations of Various Metastable Structures on Si(001) at Different Temperatures

Molecular Dynamics Simulations of Vacancy Generation and Migration Near a Monocrystalline Silicon Surface During Energetic Cluster Ion Implantation

Atomic Structure of Sr-induced Reconstructions on the Si(100) Surface

The Microscopic Mechanisms of Dimer Opening in the Early Stages of Si Deposition on Si(100)-(2 × 1)

Structural and Electronic Properties of Ge-Si, Sn-Si, and Pb-Si Dimers on Si(001) from Density-Functional Calculations

Atomic Structure Of The Si(103)1x1-In Surface

Structure and Effects of Vacancies in Σ3 (112) Grain Boundaries in Si

Vibration of the Dimer on Si(001) Surface Excited by STM Current

Formation and properties of defects and small vacancy clusters in SiC: Ab initio calculations

Spontaneous Vacancy Array Formation on FeSi2 and CoSi2 Formed on Si(100) 2×n Surface

A new structural model for the SiC(0001)(3×3) surface derived from first principles studies

A New Structural Model For The Sic(0001)(3 X 3) Surface Derived From First Principles Studies