Abstract:The structure of diamond/silicon interface, which was formed by the contact and the subsequent relaxation of the unreconstructed (001) surfaces of diamond film and silicon substrate, has been investigated by molecular dynamics simulation. The interaction among atoms of the silicon/carbon binary system was described by Tersoff many-body empirical potential. Before relaxation, the ratios of silicon atoms to carbon atoms along [110] and [11̄0] directions are both 3:2 and the ratio of the total number of interfacial silicon atoms to that of carbon is 9:4. After relaxation, the matching of diamond and silicon lattices has been changed: along[110] direction, a 3:2 coincidence relation is roughly remained, but along [11̄0] direction, a 1:1 coincidence relation is approximately adopted. Accordingly, the ratio of the total number of interfacial silicon atoms to that of carbon is near 3:2. The migration of partial silicon atoms, which were originally in the second layer, upward to the interface is responsible for such changes. The silicon lattice near the interface shows the tendency of disordering along [001] direction. The strong bonding between interfacial silicon and carbon atoms was found and Si-C bonds with an average length of 0.189 nm were formed. This study has confirmed that the main feature of lattice matching is the meeting of silicon atoms at and near the interface to the arrangement of interfacial carbon atoms.

Molecular Dynamics Simulations of Various Metastable Structures on Si(001) at Different Temperatures

Ab Initio Molecular Dynamics Simulations on Structural Change of Supercooled Liquid Si at Different Temperatures from 1700 to 1100K

The Microscopic Mechanisms of Dimer Opening in the Early Stages of Si Deposition on Si(100)-(2 × 1)

MOLECULAR DYNAMICS SIMULATIONS OF SINGLE Si ADATOM DIFFUSION ON THE Si(001) SURFACE AND ACROSS SINGLE-LAYER Si(001) STEPS

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Molecular Dynamics Simulation of the Local Inherent Structure of Liquid Silicon at Different Temperatures

Stability of Sb Line Structures on Si(001)

A New Study on the Structure, and Phase Transition Temperature of Bulk Silicate Materials by Simulation Method of Molecular Dynamics

A molecular dynamics simulation of diamond/silicon(001) interface

Systematic Study of Β-Sic Surface Structures by Molecular-Dynamics Simulations

Surface Orientation and Temperature Effects on the Interaction of Silicon with Water: Molecular Dynamics Simulations Using ReaxFF Reactive Force Field.

Structure and Stability of Si(114)-(2x1)

Structural change of liquid Si15Te85 and Si20Te80 with temperature: Ab initio molecular dynamics simulations

Dimer-vacancy–dimer-vacancy Interaction on the Si(001) Surface: the Nature of the 2×Nstructure

Study of Metastable Reconstructions of Si(111) Surface by STM

Reveal the Deformation Mechanism of (110) Silicon from Cryogenic Temperature to Elevated Temperature by Molecular Dynamics Simulation

Identifying Atomic Geometry And Electronic Structure Of (2 X 3)-Sr/Si(100) Surface And Its Initial Oxidation

Molecular Dynamics Simulations of Influence of Surface Temperature on Fluorine Etching of Silicon

THERMAL STABILITY AND STRUCTURE OF THE EQUILIBRIUM CLEAN SI(103) SURFACE

Liquid Structure of Al-Si Alloy: A Molecular Dynamics Simulation

The Study of Melting Stage of Bulk Silicon Using Molecular Dynamics Simulation