Abstract:We present an atomistic-continuum model to simulate ultrashort-pulse laser melting processes in semiconductor solids on the example of silicon. The kinetics of transient nonequilibrium phase transition mechanisms is addressed with a molecular dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast diffusion of and heat conduction due to photoexcited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of freestanding Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the negative volume of melting of modeled Si material, −7.5%, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a fcc crystal structure.

The Study of Melting Stage of Bulk Silicon Using Molecular Dynamics Simulation

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Molecular Dynamics Simulation on Liquid Nucleation in Ideal Silicon Crystal upon Melting

A New Study on the Structure, and Phase Transition Temperature of Bulk Silicate Materials by Simulation Method of Molecular Dynamics

The Dynamics of Non-Crystalline Silica: Insight from Molecular Dynamics Computer Simulations

Molecular Dynamics Simulation on the Mechanism of Nanometric Machining of Single-Crystal Silicon

Theoretical Prediction of Melting Temperature for Silicon

Dynamics and Diffusion Mechanism of Low-Density Liquid Silicon.

Atomistic simulations of carbon diffusion and segregation in liquid silicon

Diffusion Mechanisms in Lithium Disilicate Melt by Molecular Dynamics Simulation

Lithium Diffusion in Silicon and Induced Structure Disorder: A Molecular Dynamics Study

Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential

Voronoi Structural Evolution of Bulk Silicon Upon Melting

Atomistic-continuum modeling of short laser pulse melting of Si targets

Temperature-dependent Vibrational Spectra and Melting Behavior of Small Silicon Clusters Based Onab Initiomolecular Dynamics Simulations

Quantum molecular dynamics simulations of lithium melting using Z-method

Atomistic Simulation of the 60∘ Dislocation Mobility in Silicon Crystal

Phase Transition in Silicon from Machine Learning Informed Metadynamics

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Structural dynamics of a model of amorphous silicon