Temperature-dependent Vibrational Spectra and Melting Behavior of Small Silicon Clusters Based Onab Initiomolecular Dynamics Simulations

Jiayu Dai

DOI: https://doi.org/10.1103/physreva.79.063202

2009-01-01

Abstract:Vibrational spectra of Si-n(n=4-7) clusters are obtained by using Fourier transformation of the velocity autocorrelation function of the atoms calculated based on Car-Parrinello molecular dynamics. By comparing the calculated vibrational spectra with experimental results, the ground-state atomic structures of the clusters can be determined. Changes in the vibrational spectra and the bond-length root-mean-square fluctuation with temperature are obtained. It is shown that the characteristic structures of the vibrational spectra with ground-state configuration start to disappear before the melting start points indicated by sharp increase in the bond-length root-mean-square fluctuation with temperature. Therefore the vibrational spectra cannot be used to identify the existence of these clusters in gases before the temperature going down well below their actual formation temperatures. Melting of these small silicon clusters starts at a temperature lower than the bulk material and undergoes transition states over a finite temperature range. The trajectories of the atoms in configuration space are used to show that the structure changes during the melting process depend closely on the ground-state structures. The calculated electronic energy levels of Si-4 cluster, as an example, indicate that during melting process there are considerable energy-level broadenings caused by atomic thermal motions.