Theoretical Prediction of Melting Temperature for Silicon

J ZI,KM ZHANG,XD XIE

DOI: https://doi.org/10.1088/0256-307x/7/1/007

1990-01-01

Chinese Physics Letters

Abstract:A dynamical calculation of the state equation is presented to give a good prediction of the melting temperature for silicon which is much better than the molecular dynamics simulation result and agrees satisfactorily with the experimental value.

What problem does this paper attempt to address?

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Yifan Zhang,Rajni Chahal,Michael Gao,Karl Ludwig,Uday Pal,Adam Clayton Powell,Stephen Lam,Yu Zhong

DOI: https://doi.org/10.1149/ma2023-01211541mtgabs

2023-08-28

ECS Meeting Abstracts

Abstract:Silicon is the dominant solar material because of its abundance, low cost, and high solar efficiency. But manufacturing high-purity silicon required for solar energy is very complex, hard to scale, and unsafe since it involves dealing with toxic flammable gases. Therefore, a new solar silicon production technology based on molten salt electrolysis has been proposed. To comprehensively study the self-diffusion and deposition mechanism of silicon ions in high-temperature molten salt electrolyte and their composition and temperature dependence, both interatomic potential molecular dynamics (IPMD) and ab-initio molecular dynamics (AIMD) are introduced. Thermodynamics and transport properties of molten salt electrolyte such as density, heat capacity, viscosity etc. are investigated and compared to the existed experimental results. Also, local structural information and coordination number analysis are obtained and discussed.
Molecular Dynamics Simulations for Melting Temperatures of Caf2

ZJ Liu,XL Cheng,XL Chen,XR Chen,JH Qi,HZ Guo

DOI: https://doi.org/10.3969/j.issn.1674-0068.2005.02.010

IF: 1.09

2005-01-01

Chinese Journal of Chemical Physics

Abstract:The molecular dynamics method has been applied to simulate the melting temperatures of CaF2 at elevated temperature and high pressure and to calculate the P similar to V equation of state of CaF2 up to 100 GPa at 300 K. The interatomic potential was taken to be the sum of pairwise additive Coulomb, van der Waals attractions, and repulsive interactions. In addition, the shell model was used in molecular dynamics simulation. The pressure dependence of the melting temperature of CaF2 was predicted up to 4 GPa. However, in order to account for the superheating melting of the molecular dynamic simulation, the simulated melting temperatures of CaF2 were corrected by the modem theory of melting. Consequently, the melting temperatures of CaF2 were accurately obtained at elevated temperature and high pressure. Therefore, it is shown that shell-model molecular dynamics simulation at constant pressure indeed provides a useful tool for studying the melting temperatures of other materials under high pressures.
The Study of Melting Stage of Bulk Silicon Using Molecular Dynamics Simulation

S. L. Zhang,X. Y. Zhang,L. Qi,L. M. Wang,S. H. Zhang,Y. Zhu,R. P. Liu

DOI: https://doi.org/10.1016/j.physb.2011.04.005

2011-01-01

Abstract:The melting stage of bulk silicon is studied using classical molecular dynamics simulation. The mean square displacement and diffusion coefficient are focused allowing statistics analysis of the dynamics displacement of each atom. Three stages of the melting processes, premelting, accelerated melting and relaxation, are resolved. The structural development is evaluated through the stages by Lindemann index, non-Gaussian parameter and the second neighbor coordination number. The studies emphasize the observation that premelting occurs in the ideal crystal on melting.
Molecular Dynamics Simulations Of The Melting Curve Of Tantalum Under Pressure

Zhong-Li Liu,Ling-Cang Cai,Xiang-Rong Chen,Fu-Qian Jing

DOI: https://doi.org/10.1103/PhysRevB.77.024103

IF: 3.7

2008-01-01

Physical Review B

Abstract:We have performed coexistence phase molecular dynamics (MD) simulations to investigate the melting curve of tantalum over a wide range of pressures. To ensure faithful MD simulations, three types of potentials, including the extended Finnis-Sinclair (EFS) potential, the long-range empirical potential (LREP), and the force-matching (FM) potential, are fully tested. Through a series of tests, such as equation of states, thermal expansion, and other thermodynamic properties for liquid Ta, we have found that the EFS potential is the reliable potential for simulating both solid and liquid Ta. The EFS potential can also produce a satisfying melting curve, consistent well with both experiments of ambient pressure and shock melting at high pressure. However, the other two melting curves from the LREP and the FM potential have not so satisfying agreement with shocking melting at high pressure. Hence we recommend that the EFS should be the reliable potential for simulating melting properties of Ta as well as other properties of solid and liquid Ta.
Thermal Equation of State, and Melting and Thermoelastic Properties of Bcc Tantalum from Molecular Dynamics

Zhong-Li Liu,Xiu-Lu Zhang,Ling-Cang Cai,Xiang-Rong Chen,Qiang Wu,Fu-Qian Jing

DOI: https://doi.org/10.1016/j.jpcs.2008.07.009

IF: 4.383

2008-01-01

Journal of Physics and Chemistry of Solids

Abstract:We performed molecular dynamics simulations with the extended Finnis-Sinclair (EFS) potential to investigate thermal equation of state (EOS), and melting and thermoelastic properties of tantalum. The agreement of the obtained thermal EOS with experiments at ambient conditions is reasonably good. The EFS potential with the two-phase method also reproduced very satisfyingly the high-pressure melting curve, excellently consistent with both the experiments of melting temperature at ambient pressure and shock melting at high pressure. From molecular dynamics simulations, we also obtained the thermoelastic properties of Ta for temperatures up to 3000K at ambient pressure. Fully including anharmonic effects in molecular dynamics, our calculated elastic constants are in excellent agreement with experimental data. Shear modulus G decreases quickly with increasing temperature.
Can the Numerical Simulations of Melting in a Differentially-Heated Rectangular Cavity Be Rationally Reduced to 2D? A Comparative Study Between 2D and 3D Simulation Results

Nan Hu,Li-Wu Fan,Zi-Qin Zhu

DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2020.120751

IF: 5.2

2021-01-01

International Journal of Heat and Mass Transfer

Abstract:The commonly-adopted two-dimensional (2D) numerical simulations of melting in containers have been proved to lead to significant deviations from the experimental results on a real three-dimensional (3D) configuration. To give a quantitative comparison between the 2D and 3D results, melting in a differentially-heated rectangular cavity was taken as an example case. By manipulating the empirical parameters in the enthalpy-porosity model, it was found that the discrepancies between the 2D results and experimental data cannot be eliminated by only optimizing the computational parameters. The inherent sources for such discrepancies were then investigated with the aid of scaling analysis on melting. Several inferences were drawn from the scaling analysis, and the most important one states that the 3D melting case cannot be simplified to 2D unless the Prandtl number is much larger than 1 and the ratio of length to width is far less than 1. Moreover, the scaling correlations for melt fraction were well verified by eleven numerical cases, showing a good prediction in both quantitative and qualitative comparisons between 2D and 3D results. The comparisons and inferences concluded in this work could serve as guidelines for a rational model simplification of melting problems towards practical applications.
Molecular Dynamics Simulation on Liquid Nucleation in Ideal Silicon Crystal upon Melting

Shi Liang Zhang,Wei Gao

DOI: https://doi.org/10.4028/www.scientific.net/amr.1081.327

2014-01-01

Advanced Materials Research

Abstract:Liquid nucleation in an ideal silicon crystal is studied in the framework of Lindemann criteria by using molecular dynamics simulations. Lindemann parameter is traced during the transition. It is found that when Lindemann parameter reaches a critical value δL*=0.328, liquid emerges, and when 9.4% atoms in the crystal exceeds the critical value, a complete melting is achieved.
Temperature-dependent Vibrational Spectra and Melting Behavior of Small Silicon Clusters Based Onab Initiomolecular Dynamics Simulations

Jiayu Dai

DOI: https://doi.org/10.1103/physreva.79.063202

2009-01-01

Abstract:Vibrational spectra of Si-n(n=4-7) clusters are obtained by using Fourier transformation of the velocity autocorrelation function of the atoms calculated based on Car-Parrinello molecular dynamics. By comparing the calculated vibrational spectra with experimental results, the ground-state atomic structures of the clusters can be determined. Changes in the vibrational spectra and the bond-length root-mean-square fluctuation with temperature are obtained. It is shown that the characteristic structures of the vibrational spectra with ground-state configuration start to disappear before the melting start points indicated by sharp increase in the bond-length root-mean-square fluctuation with temperature. Therefore the vibrational spectra cannot be used to identify the existence of these clusters in gases before the temperature going down well below their actual formation temperatures. Melting of these small silicon clusters starts at a temperature lower than the bulk material and undergoes transition states over a finite temperature range. The trajectories of the atoms in configuration space are used to show that the structure changes during the melting process depend closely on the ground-state structures. The calculated electronic energy levels of Si-4 cluster, as an example, indicate that during melting process there are considerable energy-level broadenings caused by atomic thermal motions.
Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Hui-juan WANG,Cheng CHEN,Lian-wen DENG,Jian-jun JIANG

DOI: https://doi.org/10.3969/j.issn.1673-2812.2007.02.035

2007-01-01

Abstract:Molecular dynamics simulation is performed to study the vacancy-interstitial annihilation in crystalline silicon.We choose the Stillinger-Weber(SW) potential,which is commonly used for silicon,to describe the interaction between atoms. The simulation is calculated by Verlet algorithm and programmed through C++ in the environment of VC++.The result shows that 111 is the preferred combination direction and there exists an energy barrier in the motion,the value of which is between 0.5eV and 1.2eV.
Dynamics and Diffusion Mechanism of Low-Density Liquid Silicon.

B. Shen,Z. Y. Wang,F. Dong,Y. R. Guo,R. J. Zhang,Y. X. Zheng,S. Y. Wang,C. Z. Wang,K. M. Ho,L. Y. Chen

DOI: https://doi.org/10.1021/acs.jpcb.5b09138

2015-01-01

Abstract:A first-order phase transition from a high-density liquid to a low-density liquid has been proposed to explain the various thermodynamic anomies of water. It also has been proposed that such liquid-liquid phase transition would exist in supercooled silicon. Computer simulation studies show that, across the transition, the diffusivity drops roughly 2 orders of magnitude, and the structures exhibit considerable tetrahedral ordering. The resulting phase is a highly viscous, low-density liquid silicon. Investigations on the atomic diffusion of such a novel form of liquid silicon are of high interest. Here we report such diffusion results from molecular dynamics simulations using the classical Stillinger-Weber (SW) potential of silicon. We show that the atomic diffusion of the low-density liquid is highly correlated with local tetrahedral geometries. We also show that atoms diffuse through hopping processes within short ranges, which gradually accumulate to an overall random motion for long ranges as in normal liquids. There is a close relationship between dynamical heterogeneity and hopping process. We point out that the above diffusion mechanism is closely related to the strong directional bonding nature of the distorted tetrahedral network. Our work offers new insights into the complex behavior of the highly viscous low density liquid silicon, suggesting similar diffusion behaviors in other tetrahedral coordinated liquids that exhibit liquid-liquid phase transition such as carbon and germanium.
Atomistic simulations of carbon diffusion and segregation in liquid silicon

Jinping Luo,Abdullah Alateeqi,Lijun Liu,Talid Sinno

DOI: https://doi.org/10.1063/1.5006944

IF: 2.877

2017-12-14

Journal of Applied Physics

Abstract:The diffusivity of carbon atoms in liquid silicon and their equilibrium distribution between the silicon melt and crystal phases are key, but unfortunately not precisely known parameters for the global models of silicon solidification processes. In this study, we apply a suite of molecular simulation tools, driven by multiple empirical potential models, to compute diffusion and segregation coefficients of carbon at the silicon melting temperature. We generally find good consistency across the potential model predictions, although some exceptions are identified and discussed. We also find good agreement with the range of available experimental measurements of segregation coefficients. However, the carbon diffusion coefficients we compute are significantly lower than the values typically assumed in continuum models of impurity distribution. Overall, we show that currently available empirical potential models may be useful, at least semi-quantitatively, for studying carbon (and possibly other impurity) transport in silicon solidification, especially if a multi-model approach is taken.

physics, applied
The Dynamics of Non-Crystalline Silica: Insight from Molecular Dynamics Computer Simulations

Walter Kob,Jurgen Horbach,Kurt Binder

DOI: https://doi.org/10.1063/1.58528

1998-12-07

Abstract:Using a large scale molecular dynamics computer simulation we investigate the dynamics of a supercooled melt of SiO_2. We find that with increasing temperature the temperature dependence of the diffusion constants crosses over from an Arrhenius-law, with activation energies close to the experimental values, to a power-law dependence. We show that this crossover is related to the fact that at low temperatures the dynamics of the ions is dominated by hopping processes, whereas at high temperatures it shows the continuous flow-like motion proposed by the ideal version of mode-coupling theory (MCT). Finally we show that at low temperatures the dynamics of the system in the beta-relaxation regime obeys the factorization property, in agreement with MCT.

Statistical Mechanics,Disordered Systems and Neural Networks
Modelling of the Melting Temperature of Nano-Ice in MCM-41 Pores

Q. Jiang,Lihong Liang,Ming‐Chun Zhao

DOI: https://doi.org/10.1088/0953-8984/13/20/101

2001-01-01

Journal of Physics Condensed Matter

Abstract:The melting temperature of nano-ice confined in micropores of MCM-41 is predicted by use of our simple model based on the Lindemann criterion. The model takes into consideration the density of the OH bonds of MCM-41 pores; its prediction is consistent with the experimental results for the melting temperature of nano-ice. The applicability of the Gibbs-Thompson equation to nanocrystals in the mesoscopic size range is compared with that of our model and a modification of that same equation is compared with our model.
Calculation of solid–liquid interfacial free energy of silicon based on classical nucleation theory

L. K. Wu,Q. L. Li,B. Xu,W. Liu

DOI: https://doi.org/10.1557/jmr.2016.432

IF: 2.7

2016-01-01

Journal of Materials Research

Abstract:The solid–liquid interfacial free energy of silicon was calculated by the method based on classical nucleation theory (CNT), where the molecular dynamic (MD) simulations were carried out, and a series of cylindrical solid nuclei were equilibrated with undercooled liquid phase to create an ideal model of a homogeneous nucleation. The interfacial free energy was extracted from the relationship between the critical nuclei radii and their corresponding equilibrium temperatures. The influence of the interfacial curvature on its free energy was for the first time considered in our work, the influence can be measured by a Tolman length which was introduced to modify the traditional CNT; therefore, more accurate results were obtained. The averaged melting point and Tolman length extracted from simulations were 1678.27 K and 2.82 Å, respectively, which are consistent with the expected results. The averaged interfacial free energy is 401.92 mJ/m 2 , which is in good agreement with the results from experiments.
Melting temperature prediction via first principles and deep learning

Qi-Jun Hong

DOI: https://doi.org/10.48550/arXiv.2204.04740

2022-04-11

Abstract:Melting is a high temperature process that requires extensive sampling of configuration space, thus making melting temperature prediction computationally very expensive and challenging. Over the past few years, I have built two methods to address this challenge, one via direct density functional theory (DFT) molecular dynamics (MD) simulations and the other via deep learning graph neural networks. The DFT approach is based on statistical analysis of small-size solid-liquid coexistence MD simulations. It eliminates the risk of metastable superheated solid in the fast-heating method, while also significantly reducing the computer cost relative to the traditional large-scale coexistence method. Being both accurate and efficient (at the speed of several days per material), it is considered as one of the best methods for direct DFT melting temperature calculation. The deep learning method is based on graph neural networks that effectively handles permutation invariance in chemical formula, which drastically improves efficiency and reduces cost. At the speed of milliseconds per material, the model is extremely fast, while being moderately accurate, especially within the composition space expanded by the dataset. I have implemented both methods into automated computer code packages, making them publicly available and free to download. The DFT and deep learning methods are highly complementary to each other, and hence they can be potentially well integrated into a framework for melting temperature prediction. I demonstrated examples of applying the methods to materials design and discovery of high-melting-point materials.

Materials Science,Computational Physics
Quantum molecular dynamics simulations of lithium melting using Z-method

Dafang Li,Ping Zhang,Jun Yan

DOI: https://doi.org/10.48550/arXiv.1010.2294

2010-10-12

Abstract:We performed first-principles molecular dynamics calculations for lithium using the projector augmented waves method and the generalized gradient approximation as exchange-correlation energy. The melting curve of lithium was computed using the \textit{Z}-method technique for pressures up to 30 GPa, which agrees well with the experimental and two-phase simulated results. The change of the melting line slope from positive to negative was predicted by the characteristic shape inversion of the \textit{Z} curve at about 8.2 GPa. Through analyzing the static properties, we conclude that no liquid-liquid phase transition accompanies the occurrence of the melting line maximum, which is caused by the higher compressibility of the liquid phase compared to the solid phase. In addition, we systematically studied the dynamic and optical properties of lithium near melting curve at critical superheating and melting temperatures. It was suggested that spectra difference at critical superheating and melting temperature may be able to diagnose the homogeneous melting.

Materials Science,Computational Physics,Fluid Dynamics,Geophysics
Molecular Dynamics Simulations of Thermal Conductivity of Silicon Nanotubes

Yuk Wai Tang,Zhen Huang,Xinwei Wang,X. C. Zeng

DOI: https://doi.org/10.1166/jctn.2006.023

2006-01-01

Journal of Computational and Theoretical Nanoscience

Abstract:We use nonequilibrium molecular dynamics simulations to calculate thermal conductivity of single-walled silicon nanotubes (SWSNT). Using a Stillinger and Weber potential for interactions between silicon, we first apply a heat bath-heat sink method on bulk silicon crystal and find that the result of thermal conductivity at a temperature of 500 K that agrees with literature value. We then apply the same method on SWSNT and find that thermal conductivities at temperatures of 400 and 600 K are similar to the bulk case. The results indicate that the phonon transport properties of silicon are not much affected by the nanotube structure.
Predicting the Melting Temperatures of Bulk Materials

X. X. Ye,X. F. Gong,Y. Q. Xie,W. F. Yu,J. Zhuang,W. X. Zhang,W. M. Wang,X. J. Ning

DOI: https://doi.org/10.1209/0295-5075/91/46001

2010-01-01

Europhysics Letters

Abstract:Design of crystal materials requires predicting melting temperatures, challenging current theories of material design. By introducing the concept of condensing potential (CP), it is shown that melting temperatures are proportional to CP1/2 for a series of fcc metals (Ni, Cu, Al, Ir, Rh, Ag, Pd, Pt). In order to understand the dependence of melting upon different surfaces of the same crystal, a new concept of surface melting potential (SMP) is introduced, showing that the surface melting points increase monotonically with increasing SMP. Due to the calculation simplicity of CP and SMP, this evaluating system might prove a convenient way to predict melting temperatures of newly designed materials. Copyright (C) EPLA, 2010
An Improved Modified Embedded-Atom Method Potential to Fit the Properties of Silicon at High Temperature

Xiusong Huang,Xixi Dong,Lehua Liu,Peijie Li

DOI: https://doi.org/10.1016/j.commatsci.2018.07.001

IF: 3.572

2018-01-01

Computational Materials Science

Abstract:An improved modified embedded-atom method (MEAM) potential for Si was optimized. The potential could quite well fit the potential energy curve and the elastic constants of diamond Si, the pair correlation function, the structure factor and the bond angle distribution function of liquid Si. The potential could also well fit the melting point and the solid-liquid phase transformation enthalpy. The potential could be used to study the solid-liquid transformation behaviors and the liquid structure of Si, and it could also be used to develop a MEAM potential for the binary Al-Si alloy.
Estimation of the ice melting point in molecular dynamics simulations based on the finite-size effects

Shuting Ji,Zhenlei Yang,Liang Lei,Sergio Andres Galindo Torres,Ling Li

DOI: https://doi.org/10.1103/physreve.109.014108

IF: 2.707

2024-01-09

Physical Review E

Abstract:Predicting the ice melting point using molecular dynamics (MD) simulations is nontrivial due to uncertainty associated with the stochastic nature of the simulation and effect of finite domain sizes on the simulated ice-water phase transition. We developed a method based on the percolation theory to make use of the finite size effects to allow determination of a unique critical phase transition temperature as the melting point. The method involves construction of melting/freezing probability curves from multiple simulations with varying temperatures for different domain sizes. While the domain sizes affect the apparent melting/freezing probability and hence generate different curves with a wider probability distribution for a smaller size, the intersection of these curves is unique and locates the melting point. Based on MD simulations using the Tip4p/Ice water model, we tested and demonstrated the effectiveness of this method in locating the critical ice-water phase transition at a melting temperature of 268.78 K. Our analysis also showed that the apparent melting probability at this critical point is ∼0.69, not 0.5 assumed in the ad hoc method used previously. Our method, making no assumption about the system size, may provide a generic framework for analyzing phase transitions influenced by the finite size effects in MD simulations. https://doi.org/10.1103/PhysRevE.109.014108 ©2024 American Physical Society

physics, fluids & plasmas, mathematical

Theoretical Prediction of Melting Temperature for Silicon

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Molecular Dynamics Simulations for Melting Temperatures of Caf2

The Study of Melting Stage of Bulk Silicon Using Molecular Dynamics Simulation

Molecular Dynamics Simulations Of The Melting Curve Of Tantalum Under Pressure

Thermal Equation of State, and Melting and Thermoelastic Properties of Bcc Tantalum from Molecular Dynamics

Can the Numerical Simulations of Melting in a Differentially-Heated Rectangular Cavity Be Rationally Reduced to 2D? A Comparative Study Between 2D and 3D Simulation Results

Molecular Dynamics Simulation on Liquid Nucleation in Ideal Silicon Crystal upon Melting

Temperature-dependent Vibrational Spectra and Melting Behavior of Small Silicon Clusters Based Onab Initiomolecular Dynamics Simulations

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Dynamics and Diffusion Mechanism of Low-Density Liquid Silicon.

Atomistic simulations of carbon diffusion and segregation in liquid silicon

The Dynamics of Non-Crystalline Silica: Insight from Molecular Dynamics Computer Simulations

Modelling of the Melting Temperature of Nano-Ice in MCM-41 Pores

Calculation of solid–liquid interfacial free energy of silicon based on classical nucleation theory

Melting temperature prediction via first principles and deep learning

Quantum molecular dynamics simulations of lithium melting using Z-method

Molecular Dynamics Simulations of Thermal Conductivity of Silicon Nanotubes

Predicting the Melting Temperatures of Bulk Materials

An Improved Modified Embedded-Atom Method Potential to Fit the Properties of Silicon at High Temperature

Estimation of the ice melting point in molecular dynamics simulations based on the finite-size effects