Erratum: “Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si” [Appl. Phys. Lett. <b>120</b>, 153501 (2022)]

Siyuan Xu,Lining Liu,Guangming Qu,Xingfei Zhang,Chunyang Jia,Songhao Wu,Yuanxiao Ma,Young Jin Lee,Guodong Wang,Ji-Hyeon Park,Yiyun Zhang,Xiaoyan Yi,Yeliang Wang,Jinmin Li

DOI: https://doi.org/10.1063/5.0145193

IF: 4

2023-01-01

Applied Physics Letters

Abstract:First Page

What problem does this paper attempt to address?

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Fang‐Ze Li,Gen-Wen Hsieh,S. H. Dalal,Mary Newton,J.E. Stott,Pritesh Hiralal,Arokia Nathan,P. A. Warburton,Hüsnü Emrah Ünalan,Paul Beecher,Andrew J. Flewitt,Ian Robinson,G.A.J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1109/ted.2008.2010442

2009-01-01

Abstract:In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Congwei Tan,Mengshi Yu,Junchuan Tang,Xiaoyin Gao,Yuling Yin,Yichi Zhang,Jingyue Wang,Xinyu Gao,Congcong Zhang,Xuehan Zhou,Liming Zheng,Hongtao Liu,Kaili Jiang,Feng Ding,Hailin Peng

DOI: https://doi.org/10.1038/s41586-023-06093-6

IF: 64.8

2023-05-04

Nature

Abstract:Nature - Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide

multidisciplinary sciences
Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates”

Dongliang Zhang,Xinhong Cheng,Wai Tung Ng,Lingyan Shen,Li Zheng,Qian Wang,Ru Qian,Ziyue Gu,Dengpeng Wu,Wen Zhou,Hongyue Zhu,Yuehui Yu

DOI: https://doi.org/10.1109/ted.2018.2884181

IF: 3.1

2019-01-01

IEEE Transactions on Electron Devices

Abstract:The authors would like to make correction to [1] , affiliations on page 1, because one of the affiliations in [1] was missing.
Erratum to: Conformal and continuous deposition of bifunctional cobalt phosphide layers on p-silicon nanowire arrays for improved solar hydrogen evolution

Sitaramanjaneya Mouli Thalluri,Jerome Borme,Kang Yu,Junyuan Xu,Isilda Amorim,Joao Gaspar,Liang Qiao,Paulo Ferreira,Pedro Alpuim,Lifeng Liu

DOI: https://doi.org/10.1007/s12274-020-2879-5

IF: 9.9

2020-01-01

Nano Research

Abstract:The name of the first author was unfortunately misspelled
Erratum: “Synthesis, characterization and ferroelectric properties of lead-free K0.5Na0.5NbO3 nanotube arrays” [J. Appl. Phys. 109, 114104 (2011)]

Di Zhou,Haoshuang Gu,Yongming Hu,Huyong Tian,ZhaoWang,Zheli Qian,Yu Wang

DOI: https://doi.org/10.1063/1.3633225

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:Related Articles Inkjet printing of single-walled carbon nanotube thin-film transistors patterned by surface modification Appl. Phys. Lett. 99, 183106 (2011) Aligned and exchange-coupled FePt-based films Appl. Phys. Lett. 99, 172504 (2011) Performance analysis of carbon nanotube contacted phase change memory by finite element method J. Appl. Phys. 110, 084315 (2011) Controlled fabrication of single-walled carbon nanotube electrodes by electron-beam-induced oxidation Appl. Phys. Lett. 99, 173105 (2011) Step-edge faceting and local metallization of a single-wall semiconducting carbon nanotube J. Appl. Phys. 110, 073710 (2011)
Erratum: Growth of Conformal Graphene Cages on Micrometre-Sized Silicon Particles As Stable Battery Anodes

Yuzhang Li,Kai Yan,Hyun-Wook Lee,Zhenda Lu,Nian Liu,Yi Cui

DOI: https://doi.org/10.1038/nenergy.2016.17

IF: 56.7

2016-01-01

Nature Energy

Abstract:Nature Energy 1, 15029 (2016); published 25 January 2016; corrected 1 February 2016. In the version of this Article originally published, Fig. 5b contained a typographical error and the separation between the dashed lines in the right panel should have been labelled 17.2 μm. This has been corrected 1 February 2016.
Erratum: “kinase Detection with Gallium Nitride Based High Electron Mobility Transistors” [appl. Phys. Lett. 103, 013701 (2013)]

Matthew S Makowski,Isaac Bryan,Zlatko Sitar,Consuelo Arellano,Jinqiao Xie,Ramon Collazo,Albena Ivanisevic

DOI: https://doi.org/10.1063/1.4819200

IF: 4

2013-01-01

Applied Physics Letters

Abstract:[This corrects the article on p. 013701 in vol. 103.].
Erratum: Wang, D., Et Al. Self-Assembly Synthesis of the MoS2/PtCo Alloy Counter Electrodes for High-Efficiency and Stable Low-Cost Dye-Sensitized Solar Cells. Nanomaterials 2020, 10, 1725.

Zhi Zeng,Dongbo Wang,Jinzhong Wang,Shujie Jiao,Yuewu Huang,Sixiang Zhao,Bingke Zhang,Mengyu Ma,Shiyong Gao,Xingguo Feng,Liancheng Zhao

DOI: https://doi.org/10.3390/nano10112217

2020-01-01

Abstract:There is an error in the Funding statement of [...].
Erratum: Cathodoluminescence Visualisation of Local Thickness Variations of GaAs/AlGaAs Quantum-Well Tubes on Nanowires (2020 Nanotechnology 31 424001)

Anders Gustafsson,Nian Jiang,Changlin Zheng,Joanne Etheridge,Qiang Gao,Hark Hoe Tan,Chennupati Jagadish,Jennifer Wong‐Leung

DOI: https://doi.org/10.1088/1361-6528/abdba9

IF: 3.5

2021-01-01

Nanotechnology

Abstract:1 Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00, Lund, Sweden Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra ACT 2601, Australia Monash Centre for Electron Microscopy, Monash University, Victoria 3800, Australia ARC Centre of Excellence on Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra ACT 2601, Australia
Erratum To: Epitaxial Growth of Hyperbranched Cu/Cu2O/CuO Core–shell Nanowire Heterostructures for Lithium-Ion Batteries

Yuxin Zhao,Ying Zhang,Hu Zhao,Xuejin Li,Yanpeng Li,Ling Wen,Zifeng Yan,Ziyang Huo

DOI: https://doi.org/10.1007/s12274-017-1843-5

2017-01-01

Abstract:The authors note that there is an extra incorrect citation for Fig. S5 appeared on page 2770. It has also come to our attention that Figs. 5 and 6 appeared incorrectly. The correct figures and their legend appear below. These errors don’t affect the conclusions of the article.
Erratum: Substrate-induced Bandgap Opening in Epitaxial Graphene.

Shuyun Zhou,G.-H. Gweon,A. V. Fedorov,Phillip N. First,Walt A. de Heer,D.-H. Lee,F. Guinea,A. H. Castro Neto,Alessandra Lanzara

DOI: https://doi.org/10.1038/nmat2056

IF: 41.2

2007-01-01

Nature Materials

Abstract:Nature Materials 6, 770–775 (2007). The authors wish to make some corrections to the references in the above Article:
Corrections to "Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs"

Jinsu Jeong,Jun-Sik Yoon,Sanguk Lee,Rock-Hyun Baek

DOI: https://doi.org/10.1109/ted.2024.3394728

IF: 3.1

2024-06-21

IEEE Transactions on Electron Devices

Abstract:In the above article [1], certain parts of Figs. 1 and 3 were either written incorrectly or missing. The proper figures are provided here.

engineering, electrical & electronic,physics, applied
Correction: A detailed study of the electronic and optical properties of germanium nanotubes

Hsin-Yi Liu,Yu-Huang Chiu,Jhao-Ying Wu

DOI: https://doi.org/10.1039/d4cp90124j

2024-07-24

Abstract:Correction for 'A detailed study of the electronic and optical properties of germanium nanotubes' by Hsin-Yi Liu et al., Phys. Chem. Chem. Phys., 2024, 26, 17830-17837, https://doi.org/10.1039/D4CP00812J.
Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Florian Pantle,Fabian Becker,Max Kraut,Simon Wörle,Theresa Hoffmann,Sabrina Artmeier,Martin Stutzmann

DOI: https://doi.org/10.1039/d3na90031b

IF: 5.598

2023-03-22

Nanoscale Advances

Abstract:Correction for 'Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates' by Florian Pantle et al. , Nanoscale Adv. , 2021, 3 , 3835–3845, https://doi.org/10.1039/D1NA00221J.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Chunzi Zhang,Ozan Gunes,Yuanshi Li,Xiaoyu Cui,Masoud Mohammadtaheri,Shi-Jie Wen,Rick Wong,Qiaoqin Yang,Safa Kasap

DOI: https://doi.org/10.3390/ma13225132

IF: 3.4

2020-11-13

Materials

Abstract:The authors would like to correct a typographical error in their paper [...]

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Shu An†,HyunJung Park†,Munho Kim

DOI: https://doi.org/10.1039/d3tc90046k

IF: 6.4

2023-03-04

Journal of Materials Chemistry C

Abstract:Correction for 'Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials' by Shu An et al. , J. Mater. Chem. C , 2023, 11 , 2430–2448, https://doi.org/10.1039/d2tc05041b.

materials science, multidisciplinary,physics, applied
Erratum to “Catalysis of dispersed silver particles on directional etching of silicon” [Appl. Surf. Sci. 254(10) (2008) 3061–3066]

Y YANG,P CHU,Z WU,S PU,T HUNG,K HUO,G QIAN,W ZHANG,X WU

DOI: https://doi.org/10.1016/j.apsusc.2008.03.008

IF: 6.7

2008-01-01

Applied Surface Science

Abstract:Erratum to ‘‘Catalysis of dispersed silver particles on directional etching of silicon’’ [Appl. Surf. Sci. 254(10) (2008) 3061–3066] Y.M. Yang , Paul K. Chu *, Z.W. Wu , S.H. Pu , T.F. Hung , K.F. Huo , G.X. Qian , W.J. Zhang , X.L. Wu a,c Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China Department of Physics, Southeast University, Nanjing 211189, China National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Erratum: Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

J. J. Wang,J. M. Hu,Ren-Ci Peng,Y. Gao,Y. Shen,L. Q. Chen,C. W. Nan

DOI: https://doi.org/10.1038/srep21443

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Scientific Reports 5: Article number:10459; published online: 21 May 2015; updated: 23 February 2016 This Article contains a typographical error in a grant number in the Acknowledgements section. “This work was supported by the NSF of China (Grant Nos 11234005, 51332001, 51221291, and 51472140), andthe NSF (Grant No: DMR-1410714, DMR-0820404, and DMR-1210588).
Corrections to “high Performance Si Nanowire TFTs with Ultrahigh On/Off Current Ratio and Steep Subthreshold Swing” [jan 20 46-49]

Huaxiang Yin,Huafeng Yang,Shuang Xu,Danfeng Pan,Jun Xu,Kunji Chen,Linwei Yu

DOI: https://doi.org/10.1109/led.2020.3016380

IF: 4.8157

2020-01-01

IEEE Electron Device Letters

Abstract:In the referenced article, the corresponding authors should be Danfeng Pan (pdf@nju.edu.cn) and Linwei Yu (yulinwei@nju.edu.cn).
Ultralow-threshold Thin-Film Lithium Niobate Optical Parametric Oscillator: Erratum

Juanjuan Lu,Ayed Al Sayem,Zheng Gong,Joshua B. Surya,Chang-Ling Zou,Hong X. Tang

DOI: https://doi.org/10.1364/optica.432006

IF: 10.4

2021-01-01

Optica

Abstract:This erratum corrects a typographic error that appears in Table 1 of our earlier paper [Optica 8, 539 (2021)OPTIC82334-253610.1364/OPTICA.418984].

Erratum: “Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si” [Appl. Phys. Lett. <b>120</b>, 153501 (2022)]

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates”

Erratum to: Conformal and continuous deposition of bifunctional cobalt phosphide layers on p-silicon nanowire arrays for improved solar hydrogen evolution

Erratum: “Synthesis, characterization and ferroelectric properties of lead-free K0.5Na0.5NbO3 nanotube arrays” [J. Appl. Phys. 109, 114104 (2011)]

Erratum: Growth of Conformal Graphene Cages on Micrometre-Sized Silicon Particles As Stable Battery Anodes

Erratum: “kinase Detection with Gallium Nitride Based High Electron Mobility Transistors” [appl. Phys. Lett. 103, 013701 (2013)]

Erratum: Wang, D., Et Al. Self-Assembly Synthesis of the MoS2/PtCo Alloy Counter Electrodes for High-Efficiency and Stable Low-Cost Dye-Sensitized Solar Cells. Nanomaterials 2020, 10, 1725.

Erratum: Cathodoluminescence Visualisation of Local Thickness Variations of GaAs/AlGaAs Quantum-Well Tubes on Nanowires (2020 Nanotechnology 31 424001)

Erratum To: Epitaxial Growth of Hyperbranched Cu/Cu2O/CuO Core–shell Nanowire Heterostructures for Lithium-Ion Batteries

Erratum: Substrate-induced Bandgap Opening in Epitaxial Graphene.

Corrections to "Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs"

Correction: A detailed study of the electronic and optical properties of germanium nanotubes

Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Erratum to “Catalysis of dispersed silver particles on directional etching of silicon” [Appl. Surf. Sci. 254(10) (2008) 3061–3066]

Erratum: Corrigendum: Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

Corrections to “high Performance Si Nanowire TFTs with Ultrahigh On/Off Current Ratio and Steep Subthreshold Swing” [jan 20 46-49]

Ultralow-threshold Thin-Film Lithium Niobate Optical Parametric Oscillator: Erratum