Abstract:The affiliation of Chaoliu Zeng was not assigned correctly in the paper and the correct affiliation should be “Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P R China”. The affiliation of Weihua Li was not assigned correctly in the paper and the correct affiliation should be “School of Chemistry and Chemical Engineering, Guangxi University, Nanning, 530004, P R China and College of Chemical Engineering and Technology, Sun Yat-sen University, Tangjiaowan, Zhuhai, 519082, P R China ”.

Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates”

Corrigendum to “from Phenotype to Gene: Detecting Disease‐specific Gene Functional Modules Via a Text‐based Human Disease Phenotype Network Construction” [FEBS Lett. 584 (2010) 3635–3643]

Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Erratum: Substrate-induced Bandgap Opening in Epitaxial Graphene.

Correction: Epitaxial Growth of GaN Films on Unconventional Oxide Substrates

Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High ${i_{{\mathrm {on}}}}/{i_{{\mathrm {OFF}}}}$ Ratio” [may 17 540-543]

Erratum: “Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels”

Publisher Correction: Chalcogenide Glass-on-graphene Photonics

Correction to “quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor” [nov 14 3762-3767]

Erratum to: Interface structure and strain controlled Pt nanocrystals grown at side facet of MoS 2 with critical size

Erratum To: Editorial

Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]

Erratum to “Accurate Sub-Structure Characteristic Mode Analysis of Dielectric Resonator Antennas With Finite Ground Plane” [Oct 21 6930-6935]

Strategically Constructed AlGaN Doping Barriers for Efficient Deep Ultraviolet Light-Emitting Diodes: Erratum

Correction to: From Topology Optimization Design to Additive Manufacturing: Today’s Success and Tomorrow’s Roadmap

Erratum To: N-doped Graphene Quantum Dots-Functionalized Titanium Dioxide Nanofibers and Their Highly Efficient Photocurrent Response

Erratum: “Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si” [Appl. Phys. Lett. <b>120</b>, 153501 (2022)]

Correction: Corrigendum: Growth of Semiconducting Single-Wall Carbon Nanotubes with a Narrow Band-Gap Distribution

Correction to Weld Corrosion of GH3535 in Molten (li,na,k)f [int. J. Electrochem. Sci., 13 (2018) 2577-2584]

Erratum To: Volume 5, Issue 4, December 2016