Abstract:We demonstrated an innovative lateral epitaxy method to grow c-plane GaN film using serpentine masked structures, which simplified the entire fabrication process with only one single epitaxial growth step and could efficiently block the threading dislocations. The microstructural and optical properties of GaN indicated that the crystalline quality was effectively improved. Unlike the conventional epitaxial lateral overgrowth (ELOG) or the double ELOG method, the presented serpentine masked structure needs no regrowth process for obtaining low-defect-density GaN materials, and is promising for growing high-performance III–nitride-based devices including laser diodes (LDs), power transistors, and light-emitting diodes (LEDs).

Erratum: “Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels”

Erratum to “Reliability Improvement of GaN Devices on Free-Standing GaN Substrates”

Defect Reduction Via Selective Lateral Epitaxy of Gan on an Innovative Masked Structure with Serpentine Channels

Correction: Chen et al., Orbital Angular Momentum Generation and Detection by Geometric-Phase Based Metasurfaces. Appl. Sci. 2018, 8, 362

Correction: Epitaxial Growth of GaN Films on Unconventional Oxide Substrates

Strategically Constructed AlGaN Doping Barriers for Efficient Deep Ultraviolet Light-Emitting Diodes: Erratum

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Erratum: Substrate-induced Bandgap Opening in Epitaxial Graphene.

Erratum: “Single <i>β</i>-Ga2O3 nanowire based lateral FinFET on Si” [Appl. Phys. Lett. <b>120</b>, 153501 (2022)]

Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes (vol 49, pg 2049, 2024)

Corrigendum to “crystallography of Phase Transformation in the Self-Inclined InAs Nanowires Grown on GaAs{111}” [scr. Mater. 121 (2016) 79–83]

Correction To: Investigations of the Photoelectrochemical Properties of Different Contents in of InxGa1-xN in CO2 Reduction

Compact and Low Cross-Talk Silicon-on-insulator Crossing Using Periodic Dielectric Waveguide: Erratum

Erratum To: Crystal Structure and Luminescent Property of a One-Dimensional Chain Based on 1-(4-Nitrophenyl)-1,2,4-triazole

Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Fabrication and characterization of a two-dimensional individually addressable electrowetting microlens array: erratum

Correction: Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations

Correction: Epitaxial Growth of Β-Ga2o3 (−201) Thin Film on Four-Fold Symmetry CeO2 (001) Substrate for Heterogeneous Integrations

Correction: Liu, W., Et Al. Synthesis and Characterization of N‐Doped SiC Powder with Enhanced Photocatalytic and Photoelectrochemical Performance. Catalysts 2020, 10, 769

Erratum to “femtosecond Laser Direct Ablating Micro/Nanostructures and Micropatterns on CH 3 NH 3 PbI 3 Single Crystal” [apr 17 Art. No. 2400110]