Correction: Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations

Xiao Tang,Kuang-Hui Li,Che-Hao Liao,Dongxing Zheng,Chen Liu,Rongyu Lin,Na Xiao,Shibin Krishna,Jose Tauboada,Xiaohang Li
DOI: https://doi.org/10.1039/d1tc90261j
IF: 6.4
2021-01-01
Journal of Materials Chemistry C
Abstract:Correction for ‘Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations’ by Xiao Tang et al. , J. Mater. Chem. C , 2021, 9 , 15868–15876, DOI: 10.1039/D1TC02852A.
materials science, multidisciplinary,physics, applied
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